BSS209PW H6327 Infineon

BSS209PW H6327 electronic component of Infineon
BSS209PW H6327 Infineon
BSS209PW H6327 MOSFETs
BSS209PW H6327  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BSS209PW H6327 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS209PW H6327 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BSS209PW H6327
Manufacturer: Infineon
Category: MOSFETs
Description: Infineon Technologies MOSFET P-Ch -20V -630mA SOT-323-3
Datasheet: BSS209PW H6327 Datasheet (PDF)
Price (USD)
1: USD 0.3889 ea
Line Total: USD 0.39 
Availability : 34137
  
Ship by Wed. 01 Oct to Fri. 03 Oct
QtyUnit Price
1$ 0.3889
10$ 0.2689
100$ 0.164
500$ 0.0927
1000$ 0.0693
3000$ 0.0619
6000$ 0.0544
9000$ 0.048
24000$ 0.0448

Availability 1110
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.3159
50$ 0.2497
150$ 0.166
500$ 0.1254
3000$ 0.1147
6000$ 0.1084


Availability 34137
Ship by Wed. 01 Oct to Fri. 03 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.3889
10$ 0.2689
100$ 0.164
500$ 0.0927
1000$ 0.0693
3000$ 0.0619
6000$ 0.0544
9000$ 0.048
24000$ 0.0448

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Transistor Type
Brand
Rohs Mouser
Configuration
Height
Length
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSS209PW H6327 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS209PW H6327 and other electronic components in the MOSFETs category and beyond.

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BSS 209PW OptiMOS -P Small-Signal-Transistor Product Summary Features V -20 V DS P-Channel R 550 m DS(on),max Enhancement mode I -0.63 A D Super Logic level ( 2.5 V rated) 150C operating temperature PG-SOT-323 Avalanche rated dv /dt rated Pb-free lead plating RoHS compliant Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Type Package Tape and Reel Information Marking Lead free Packing BSS 209PW SOT-323 H6327: 1000 pcs/reel X3s Yes Non Dry =25 C, unless otherwise specified Maximum ratings, at T j Value Parameter Symbol Conditions Unit Continuous drain current I T =25 C -0.63 A D C T =70 C -0.5 C Pulsed drain current I T =25 C -2.5 D,pulse C I = -0.63 A, D E 4.0 Avalanche energy, single pulse mJ AS R =25 GS I = -0.63 A, D V =-16 V, DS -6 Reverse diode dv /dt dv /dt kV/s di /dt =-200 A/s, T =150 C j,max Gate source voltage V 12 V GS Power dissipation P T =25 C 0.30 W tot A T , T -55 ... 150 Operating and storage temperature C j stg ESD class JESD22-C101 (HBM) 0 (max 250V) 260 C Soldering temperature IEC climatic category DIN IEC 68-1 55/150/56 Rev. 1.32 page 1 2011-07-13BSS 209PW Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 120 K/W thJS junction - soldering point minimal footprint R SMD version, device on PCB: - - 420 thJA 2 1) - - 350 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =-250A Drain-source breakdown voltage -20 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =3.5 A -0.6 -0.9 -1.2 GS(th) DS GS D V =-20 V, V =0 V, DS GS Zero gate voltage drain current I - -0.1 -1 A DSS T =25 C j V =-20 V, V =0 V, DS GS - -10 -100 T =150 C j I V =12 V, V =0 V Gate-source leakage current - -10 -100 nA GSS GS DS Drain-source on-state resistance R V =2.5 V, I =0.46 A - 581 900 DS(on) GS D V =4.5 V, I =0.63 A - 379 550 GS D V >2 I R , DS D DS(on)max g Transconductance 0.87 1.74 - S fs I =0.46 A D 1) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air t10 sec. Rev. 1.32 page 2 2011-07-13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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