Product Information

BSS7728NH6327XTSA2

BSS7728NH6327XTSA2 electronic component of Infineon

Datasheet
Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0476 ea
Line Total: USD 142.8

58200 - Global Stock
Ships to you between
Fri. 05 Apr to Thu. 11 Apr
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2910 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 3000
Multiples : 3000
3000 : USD 0.0553

6867 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 1
Multiples : 1
1 : USD 0.1412
10 : USD 0.1325
25 : USD 0.1311
100 : USD 0.0991
250 : USD 0.07
500 : USD 0.0564
1000 : USD 0.0553
3000 : USD 0.0553
6000 : USD 0.0553

9 - Global Stock


Ships to you between
Fri. 12 Apr to Wed. 17 Apr

MOQ : 1
Multiples : 1
1 : USD 0.3657
10 : USD 0.2987
30 : USD 0.2662
100 : USD 0.2327
500 : USD 0.2132
1000 : USD 0.2033

2890 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 10
Multiples : 1
10 : USD 0.1599
100 : USD 0.1144
217 : USD 0.0754
250 : USD 0.0754
595 : USD 0.0715

11473 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 243
Multiples : 1
243 : USD 0.1515
500 : USD 0.1469
1000 : USD 0.116
2000 : USD 0.112

58200 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 3000
Multiples : 3000
3000 : USD 0.0476
30000 : USD 0.0466

2910 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 3000
Multiples : 3000
3000 : USD 0.0553

6867 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 158
Multiples : 1
158 : USD 0.0991
250 : USD 0.07
500 : USD 0.0564
1000 : USD 0.0553

     
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Power Dissipation
LoadingGif

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Rev. 2.5 BSS7728N SIPMOS Small-Signal-Transistor Product Summary Feature V 60 V DS N-Channel R 5 DS(on) Enhancement mode I 0.2 A D Logic Level PG-SOT-23 dv/dt rated Drain pin 3 Qualified according to AEC Q101 Gate pin1 Halogen-free according to IEC61249-2-21 Source pin 2 Type Package Pb-free Tape and Reel Information Marking PG-SOT-23 Yes BSS7728N H6327: 3000 pcs/reel sSK Maximum Ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C 0.2 A T =70C 0.16 A 0.8 Pulsed drain current I D puls T =25C A 6 kV/s Reverse diode dv/dt dv/dt I =0.2A, V =48V, di/dt=200A/s, T =150C S DS jmax V Gate source voltage V 20 GS 0.36 W Power dissipation P tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 ESD Class Class 0 JESD22-A114-HBM Page 1 2011-07-11Rev. 2.5 BSS7728N Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 350 K/W Thermal resistance, junction - ambient R thJA at minimal footprint Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics 60 - - V Drain-source breakdown voltage V (BR)DSS V =0, I =250A GS D 1.3 1.9 2.3 Gate threshold voltage, V = V V GS DS GS(th) I =26A D A Zero gate voltage drain current I DSS V =60V, V =0, T =25C - - 0.1 DS GS j V =60V, V =0, T =150C - - 5 DS GS j - 1 10 nA Gate-source leakage current I GSS V =20V, V =0 GS DS - 4.3 7.5 Drain-source on-state resistance R DS(on) V =4.5V, I =0.05A GS D - 2.7 5 Drain-source on-state resistance R DS(on) V =10V, I =0.5A GS D Page 2 2011-07-11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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