BSZ0602LSATMA1 Infineon

BSZ0602LS MOSFET TSDSON-8 FL OptiMOS 5 Power-Transistor , 80 V (enlarged source interconnection) Features Ideal for high frequency switching Optimized for chargers Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, logic level 100% avalanche tested Pb-free plating RoHS compliant Halogen-free according to IEC61249-2-21 Higher solder joint reliability with enlarged source interconnection Qualified for Standard Grade applications S1 8D S2 7D Table 1 Key Performance Parameters Parameter Value Unit S3 6D V DS 80 V G4 5D R 7.0 m DS(on),max I 40 A D Q 29 nC oss Q (0V..4.5V) 14 nC G Type / Ordering Code Package Marking Related Links BSZ0602LS PG-TSDSON-8 FL 0602LS - Final Data Sheet 1 Rev. 2.2, 2016-10-20 OptiMOS 5 Power-Transistor, 80 V BSZ0602LS Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 11 Trademarks . 11 Disclaimer 11 Final Data Sheet 2 Rev. 2.2, 2016-10-20