BSZ086P03NS3G Infineon

Name: BSZ086P03NS3G
Brand: Infineon
SKU: BSZ086P03NS3G_1_Infineon
Availability: InStock
Rating: 5 (11 reviews)

BSZ086P03NS3G electronic component of Infineon

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BSZ086P03NS3G MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSZ086P03NS3G MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	BSZ086P03NS3G
Manufacturer:	Infineon
Category:	MOSFETs
Description:	MOSFET P Channel 30V 13.5A 3.1V @ 105uA 8.6mO @ 20A,10V TSDSON-8 RoHS
Datasheet:	BSZ086P03NS3G Datasheet (PDF)

Price (USD)

1: USD 0.6362 ea
Line Total: USD 0.64

Availability : 1431

Ship by Fri. 03 Oct to Thu. 09 Oct

Qty Unit Price
1 $ 0.6362
10 $ 0.5566
30 $ 0.521
100 $ 0.324
500 $ 0.2888
1000 $ 0.2794

BSZ086P03NS3G More Buying Options & Price Grid(s)

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Availability

Price (USD)

Buy Price

Quantity

Availability 1431

Ship by Fri. 03 Oct to Thu. 09 Oct

MOQ : 1
Multiples : 1

Qty Unit Price
1 $ 0.6362
10 $ 0.5566
30 $ 0.521
100 $ 0.324
500 $ 0.2888
1000 $ 0.2794

Specifications

Manufacturer

Infineon Infineon

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

TSDSON - 8 TSDSON - 8

Brand Category

Infineon Infineon

Fet Type

P Channel P Channel

Drain To Source Voltagevdss

30 V 30 V

Continuous Drain Current Id @ 25°C

13.5 A 13.5 A

Vgsth Max @ Id

3.1V @ 105uA 3.1V @ 105uA

Rds On Max @ Id Vgs

8.6mO @ 20A,10V 8.6mO @ 20A,10V

Power Dissipation-Max Ta 25°C

2.1 W 2.1 W

Drain Source Voltage Vdss

30 V 30 V

Continuous Drain Current Id

13.5 A 13.5 A

Drain Source On Resistance Rdson@Vgs Id

8.6 mOhms @10V , 20A 8.6 mOhms @10V , 20A

Power Dissipation Pd

2.1 W 2.1 W

Gate Threshold Voltage Vgsth@Id

3.1 V @105uA 3.1 V @105uA

Type

P Channel P Channel

Notes:- Show Stocked Products With Similar Attributes.

BSZ086P03NS3G Alternative Parts

We are delighted to provide the BSZ086P03NS3G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSZ086P03NS3G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The BSZ086P03NS3G is a P-channel MOSFET developed by Infineon. It offers excellent switching performance with a 30V drain-source voltage rating, 13.5A maximum drain current, 3.1V @ 105µA gate threshold voltage, 8.6 mO @ 20A, 10V drain-source on-resistance, and it operates over a wide temperature range. It is in a compact TSDSON-8 package meeting RoHS compliant standards. This MOSFET is suitable for a variety of applications, including automotive, industrial, telecommunications, and computing.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Qty	Unit Price
1	$ 0.6362
10	$ 0.5566
30	$ 0.521
100	$ 0.324
500	$ 0.2888
1000	$ 0.2794

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