BSZ086P03NS3GATMA1 Infineon

BSZ086P03NS3GATMA1 electronic component of Infineon
BSZ086P03NS3GATMA1 Infineon
BSZ086P03NS3GATMA1 MOSFETs
BSZ086P03NS3GATMA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BSZ086P03NS3GATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSZ086P03NS3GATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BSZ086P03NS3GATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Datasheet: BSZ086P03NS3GATMA1 Datasheet (PDF)
Price (USD)
5000: USD 0.2812 ea
Line Total: USD 1406 
Availability : 101850
  
Ship by Tue. 12 Aug to Mon. 18 Aug
QtyUnit Price
5000$ 0.2812
10000$ 0.2812
15000$ 0.275

Availability 101850
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 5000
Multiples : 5000
QtyUnit Price
5000$ 0.2812
10000$ 0.2812
15000$ 0.275


Availability 6854
Ship by Fri. 08 Aug to Tue. 12 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0137
10$ 0.76
100$ 0.4675
500$ 0.3751
1000$ 0.3201
5000$ 0.2937
10000$ 0.2827


Availability 14481
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 221
Multiples : 1
QtyUnit Price
221$ 1.1804
293$ 0.8879
500$ 0.7553
1000$ 0.5825
5000$ 0.5712
10000$ 0.4588


Availability 14550
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 5000
Multiples : 5000
QtyUnit Price
5000$ 0.3045

   
Manufacturer
Product Category
Technology
Polarisation
Mounting
Case
Type Of Transistor
Drain-Source Voltage
On-State Resistance
Drain Current
Gate-Source Voltage
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSZ086P03NS3GATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSZ086P03NS3GATMA1 and other electronic components in the MOSFETs category and beyond.

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BSZ086P03NS3 G TM OptiMOS P3 Power-Transistor Product Summary V -30 V Features DS R 8.6 single P-Channel in S3O8 mW DS(on),max 1) Qualified according JEDEC for target applications I -40 A D PG-TSDSON-8 150 C operating temperature V =25 V, specially suited for notebook applications GS Pb-free RoHS compliant applications: battery management, load switching Halogen-free according to IEC61249-2-21 Type Package Marking Lead free Halogen free Packing Yes BSZ086P03NS3 G PG-TSDSON-8 086P3N Yes non-dry Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25C -40 A D C T =70C -40 C 2) -13.5 T =25 C A 3) Pulsed drain current I -160 T =25C D,pulse C Avalanche energy, single pulse E I =-20A, R =25W 105 mJ AS D GS V 25 Gate source voltage V GS P T =25C 69 Power dissipation W tot A 2) 2.1 T =25C A Operating and storage temperature T , T -55 150 C j stg 1C (1 kV - 2 kV) ESD class JESD22-A114 HBM 260 Soldering temperature C IEC climatic category DIN IEC 68-1 55/150/56 1) J-STD20 and JESD22 Rev. 2.03 page 1 2013-01-08BSZ086P03NS3 G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 1.8 K/W thJC junction - case Thermal resistance, 2 2) R - - 60 6 cm cooling area thJA junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V Drain-source breakdown voltage V =0V, I =-250mA -30 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =-105A -3.1 -2.5 -1.9 GS(th) DS GS D V =-30V, V =0V, DS GS I Zero gate voltage drain current - - -1 A DSS T =25C j V =-30V, V =0V, DS GS - - -10 T =125C j I V =-25V, V =0V Gate-source leakage current - - -100 nA GSS GS DS R V =-6V, I =-20A Drain-source on-state resistance - 8.7 13.4 mW DS(on) GS D V =-10V, I =-20A - 6.5 8.6 GS D R Gate resistance - 2.2 - W G V >2 I R , DS D DS(on)max Transconductance g 30 43 - S fs I =-20A D 2) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) See Fig. 3 for more detailed information Rev. 2.03 page 2 2013-01-08

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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