BSZ0901NSI TM OptiMOS Power-MOSFET Product Summary Features V 30 V DS Optimized SyncFET for high performance buck converter R 2.1 mW DS(on),max Integrated monolithic Schottky-like diode I 40 A D Very low on-resistance R V =4.5 V DS(on) GS Q 28 nC OSS 100% avalanche tested Q (0V..10V) 41 nC G Superior thermal resistance PG-TSDSON-8 (fused leads) N-channel 1) Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Halogen-free according to IEC61249-2-21 Type Marking Package BSZ0901NSI PG-TSDSON-8 (fused leads) 0901NSI Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I V =10 V, T =25C 40 A D GS C V =10 V, T =100C 40 GS C V =4.5 V, T =25C 40 GS C V =4.5 V, GS 40 T =100C C V =10 V, T =25C, GS A 25 2) R =60K/W thJA 3) I T =25C 160 Pulsed drain current D,pulse C 4) I T =25C 20 Avalanche current, single pulse AS C Avalanche energy, single pulse E I =20A, R =25W 80 mJ AS D GS V Gate source voltage 20 V GS 1) J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.2 page 1 2013-05-13 BSZ0901NSI Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Power dissipation P T =25C 69 W tot C T =25 C, A 2.1 2) R =60K/W thJA T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 1.8 K/W thJC 2 2) Device on PCB R - - 60 6 cm cooling area thJA Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =10mA Drain-source breakdown voltage 30 - - V (BR)DSS GS D dV I =10mA, referenced Breakdown voltage temperature (BR)DSS D - 15 - mV/K coefficient /dT to 25C j Gate threshold voltage V V =V , I =250A 1.2 - 2 V GS(th) DS GS D Zero gate voltage drain current I V =24V, V =0V - - 0.5 mA DSS DS GS V =24V, V =0V, DS GS - 3 - T =125C j I V =20V, V =0V Gate-source leakage current - 10 100 nA GSS GS DS Drain-source on-state resistance R V =4.5V, I =20A - 2.2 2.8 mW DS(on) GS D V =10V, I =20A - 1.8 2.1 GS D R Gate resistance 0.4 0.8 1.6 W G V >2 I R , DS D DS(on)max g Transconductance 50 100 - S fs I =20A D 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Rev. 2.2 page 2 2013-05-13