BSZ160N10NS3G Infineon

Name: BSZ160N10NS3G
Brand: Infineon
SKU: BSZ160N10NS3G_1_Infineon
Availability: InStock
Rating: 5 (11 reviews)

BSZ160N10NS3G electronic component of Infineon

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BSZ160N10NS3G MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSZ160N10NS3G MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	BSZ160N10NS3G
Manufacturer:	Infineon
Category:	MOSFETs
Description:	MOSFET N Channel 100V 8A 3.5V @ 33uA 16mO @ 20A,10V TSDSON-8 RoHS
Datasheet:	BSZ160N10NS3G Datasheet (PDF)

Price (USD)

1: USD 1.8714 ea
Line Total: USD 1.87

Availability : 52

Ship by Fri. 03 Oct to Thu. 09 Oct

Qty Unit Price
1 $ 1.8714
10 $ 1.5192
30 $ 0.9058
100 $ 0.7879
500 $ 0.7168
1000 $ 0.6793

BSZ160N10NS3G More Buying Options & Price Grid(s)

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Availability

Price (USD)

Buy Price

Quantity

Availability 52

Ship by Fri. 03 Oct to Thu. 09 Oct

MOQ : 1
Multiples : 1

Qty Unit Price
1 $ 1.8714
10 $ 1.5192
30 $ 0.9058
100 $ 0.7879
500 $ 0.7168
1000 $ 0.6793

Specifications

Manufacturer

Infineon Infineon

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

TSDSON - 8 TSDSON - 8

Brand Category

Infineon Infineon

Fet Type

N Channel N Channel

Drain To Source Voltagevdss

100 V 100 V

Continuous Drain Current Id @ 25°C

8 A 8 A

Vgsth Max @ Id

3.5V @ 33uA 3.5V @ 33uA

Rds On Max @ Id Vgs

16mO @ 20A,10V 16mO @ 20A,10V

Power Dissipation-Max Ta 25°C

2.1 W 2.1 W

Drain Source Voltage Vdss

100 V 100 V

Continuous Drain Current Id

8 A 8 A

Power Dissipation Pd

2.1 W 2.1 W

Drain Source On Resistance Rdson@Vgs Id

16 mOhms @10V , 20A 16 mOhms @10V , 20A

Gate Threshold Voltage Vgsth@Id

3.5 V @33uA 3.5 V @33uA

Type

N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

BSZ160N10NS3G Alternative Parts

We are delighted to provide the BSZ160N10NS3G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSZ160N10NS3G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The Infineon BSZ160N10NS3G is a N-Channel MOSFET designed with a 100V drain-source voltage, 8A drain-source current, 3.5V gate-source voltage, 33uA gate-source current, 16mO on resistance at 20A, and a 10V threshold temperature. Manufactured with TSDSON-8 and compliant with the RoHS standard, it enables an efficient and reliable MOSFET high-side switching. It is ideal for use in automotive and industrial applications due to its power efficiency, protection features, and high-frequency switching capabilities.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Qty	Unit Price
1	$ 1.8714
10	$ 1.5192
30	$ 0.9058
100	$ 0.7879
500	$ 0.7168
1000	$ 0.6793

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