Type BSZ42DN25NS3 G TM OptiMOS 3 Power-Transistor Product Summary Features V 250 V DS Optimized for dc-dc conversion R 425 mW DS(on),max N-channel, normal level I 5 A D Excellent gate charge x R product (FOM) DS(on) Low on-resistance R DS(on) PG-TSDSON-8 150 C operating temperature Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Halogen-free according to IEC61249-2-21 Type Package Marking BSZ42DN25NS3 G PG-TSDSON-8 42DN25N Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C Continuous drain current 5 A D C T =100C 3.5 C 2) I T =25C 20 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =2.5A, R =25W 40 mJ AS D GS Reverse diode dv /dt dv /dt 10 kV/s Gate source voltage V 20 V GS P T =25C Power dissipation 33.8 W tot C T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) J-STD20 and JESD22 2) see figure 3 Rev. 2.4 page 1 2015-05-13BSZ42DN25NS3 G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 3.7 K/W thJC Thermal resistance, 2 3) R - - 60 thJA 6 cm cooling area junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =1mA Drain-source breakdown voltage 250 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =13A 2 3 4 GS(th) DS GS D V =200V, V =0V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25C j V =200V, V =0V, DS GS - 10 100 T =125C j Gate-source leakage current I V =20V, V =0V - 1 100 nA GSS GS DS Drain-source on-state resistance R V =10V, I =2.5A - 371 425 mW DS(on) GS D R Gate resistance - 1.7 - W G V >2 I R , DS D DS(on)max Transconductance g 3 6 - S fs I =2.5A D 3) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.4 page 2 2015-05-13