uper, IAUC120N04S6L005 OptiMOS - 6 Power-Transistor Product Summary V 40 V DS R 0.55 m W DS(on),max I 120 A D Features PG-TDSON-8-53 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified 1 MSL1 up to 260C peak reflow 1 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IAUC120N04S6L005 PG-TDSON-8-53 6N04L005 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit V =10V, GS I Drain current 435 A D 1,2) Chip Limitation V =10V, GS 120 3) DC current T =85C, V =10V, a GS 60 4,5) R on 2s2p thJA 5) I T =25C, t =100s 1550 Pulsed drain current D,pulse C p 2) E I =60A, R =25W 750 mJ Avalanche energy, single pulse AS D G I Avalanche current, single pulse R =25W 120 A AS G V Gate source voltage - 16 V GS Power dissipation P T =25C 187 W tot C Operating and storage temperature T , T - -55 ... +175 C j stg Rev. 1.0 page 1 2020-06-05 IAUC120N04S6L005 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics 5) R - - - 0.8 K/W Thermal resistance, junction - case thJC Thermal resistance, R - - 26 - thJA 4) junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 40 - - V (BR)DSS GS D V V =V , I =130A Gate threshold voltage 1.2 1.6 2.0 GS(th) DS GS D V =40V, V =0V, DS GS I Zero gate voltage drain current - - 1 A DSS T =25C j V =40V, V =0V, DS GS - - 33 2) T =125C j I V =16V, V =0V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =4.5V, I =60A - 0.57 0.80 m W DS(on) GS D V =10V, I =60A - 0.43 0.55 GS D Rev. 1.0 page 2 2020-06-05