X-On Electronics has gained recognition as a prominent supplier of IAUS300N08S5N012ATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IAUS300N08S5N012ATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IAUS300N08S5N012ATMA1 Infineon

IAUS300N08S5N012ATMA1 electronic component of Infineon
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Part No.IAUS300N08S5N012ATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET MOSFET_(75V 120V(
Datasheet: IAUS300N08S5N012ATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.9036 ea
Line Total: USD 4.9 
Availability - 970
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
970
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 4.9036
10 : USD 4.03
25 : USD 3.9897
100 : USD 3.8701
250 : USD 3.7492
500 : USD 3.6283
1000 : USD 3.5087

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IAUS300N08S5N012ATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IAUS300N08S5N012ATMA1 and other electronic components in the MOSFETs category and beyond.

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IAUS300N08S5N012 OptiMOS-5 Power-Transistor Product Summary V 80 V DS R 1.2 mW DS(on) I 300 A D Features H-PSOG-8-1 N-channel - Enhancement mode AEC qualified Tab MSL1 up to 260C peak reflow 8 Tab 175C operating temperature 1 Green product (RoHS compliant) 1 Ultra low Rds(on) 8 100% Avalanche tested Type Package Marking IAUS300N08S5N012 PG-HSOG-8-1 A08S5N12 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) Continuous drain current I 300 A T =25C, V =10V D C GS T =100C, C 300 2) V =10V GS 2) I T =25C 1200 Pulsed drain current D,pulse C 2) E I =150A 817 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - 300 A AS V Gate source voltage - 20 V GS Power dissipation P T =25C 375 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 4/10/2018IAUS300N08S5N012 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 0.4 K/W thJC Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V =0V, GS 2) V 80 - - V Drain-source breakdown voltage (BR)DSS I =1mA D Gate threshold voltage V V =V , I =275A 2.2 3 3.8 GS(th) DS GS D V =80V, V =0V, DS GS 2) I - 0.1 1 A Zero gate voltage drain current DSS T =25C j V =50V, V =0V, DS GS - 1 20 2) T =85C j Gate-source leakage current I V =20V, V =0V - - 100 nA GSS GS DS R V =6V, I =75A Drain-source on-state resistance - 1.3 1.7 m DS(on) GS D V =10V, I =100A - 1.0 1.2 GS D Rev. 1.0 page 2 4/10/2018

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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