IPA037N08N3 G (TM) OptiMOS 3 Power-Transistor Product Summary Features V 80 V DS Ideal for high frequency switching and sync. rec. R 3.7 mW DS(on),max Optimized technology for DC/DC converters I 75 A D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating RoHS compliant 1) Qualified according to JEDEC for target applications Halogen-free according to IEC61249-2-21 Type IPA037N08N3 G Package PG-TO220-FP Marking 037N08N Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 2) I Continuous drain current T =25C 75 A D C T =100C 54 C 3) I T =25C 300 Pulsed drain current D,pulse C 4) E I =75A, R =25W 680 mJ Avalanche energy, single pulse AS D GS Gate source voltage V 20 V GS Power dissipation P T =25C 41 W tot C T , T Operating and storage temperature -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 2) Current is limited by package with an RthJC=0.7 K/W in a standard TO-220 package the chip is able to carry 178A. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Rev. 2.1 page 1 2013-08-27IPA037N08N3 G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 3.7 K/W thJC Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =1mA Drain-source breakdown voltage 80 - - V (BR)DSS GS D V V =V , I =155A Gate threshold voltage 2 2.8 3.5 GS(th) DS GS D V =80V, V =0V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25C j V =80V, V =0V, DS GS - 10 100 T =125C j I V =20V, V =0V Gate-source leakage current - 1 100 nA GSS GS DS R V =10V, I =75A Drain-source on-state resistance - 3.2 3.7 mW DS(on) GS D V =6V, I =38A - 3.9 6.2 GS D R Gate resistance - 1.9 - W G V >2 I R , DS D DS(on)max Transconductance g 66 132 - S fs I =75A D Rev. 2.1 page 2 2013-08-27