IPA083N10N5XKSA1 Infineon

IPA083N10N5 MOSFET TO-220-FP OptiMOS 5 Power-Transistor , 100 V Features Ideal for high frequency switching and sync. rec. Excellent gate charge x RDS(on) product (FOM) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating RoHS compliant 1) Qualified according to JEDEC for target applications Halogen-free according to IEC61249-2-21 Drain Table 1 Key Performance Parameters Pin 2 Parameter Value Unit V 100 V DS Gate Pin 1 RDS(on),max 8.3 m Source Pin 3 I 44 A D Q 40 nC oss Q (0V..10V) 30 nC G Type / Ordering Code Package Marking Related Links IPA083N10N5 PG-TO220-FP 083N10N5 - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.1, 2016-10-03 OptiMOS 5 Power-Transistor, 100 V IPA083N10N5 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 3 Electrical characteristics diagrams . 5 Package Outlines 9 Revision History 10 Trademarks . 10 Disclaimer 10 Final Data Sheet 2 Rev. 2.1, 2016-10-03