X-On Electronics has gained recognition as a prominent supplier of IPA65R190E6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPA65R190E6 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPA65R190E6 Infineon

IPA65R190E6 electronic component of Infineon
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Part No.IPA65R190E6
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N-Ch 700V 20.2A TO220FP-3 CoolMOS E6
Datasheet: IPA65R190E6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.2775 ea
Line Total: USD 3.28 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 3.2775
10 : USD 2.8405
25 : USD 2.599
100 : USD 2.277
250 : USD 2.116
500 : USD 1.702

   
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
Qg - Gate Charge
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We are delighted to provide the IPA65R190E6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPA65R190E6 and other electronic components in the MOSFETs category and beyond.

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.1, 2018-02-28 Final Industrial & Multimarket 650V CoolMOS E6 Power Transistor IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6 IPW65R190E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSF ETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features Extremely low losses due to very low FOM Rdson*Qg and Eoss drain Very high commutation ruggedness pin 2 Easy to use/drive 1) JEDEC qualified, Pb-free plating, Halogen free gate pin 1 Applications PFC stages, hard switching PWM stages and resonant switching source pin 3 PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 700 V DS j,max R 0.19 DS(on),max Q 73 nC g,typ I 66 A D,pulse E 400V 5.9 J oss Body diode di/dt 500 A/s Type / Ordering Code Package Marking Related Links IPW65R190E6 PG-TO247 IFX CoolMOS Webpage IPB65R190E6 PG-TO263 IFX Design tools IPI65R190E6 PG-TO262 65E6190 IPP65R190E6 PG-TO220 IPA65R190E6 PG-TO220 FullPAK 1) J-STD20 and JESD22 Rev. 2.1 Page 2 2018-02-28

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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