MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.1, 2018-02-28 Final Industrial & Multimarket 650V CoolMOS E6 Power Transistor IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6 IPW65R190E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSF ETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features Extremely low losses due to very low FOM Rdson*Qg and Eoss drain Very high commutation ruggedness pin 2 Easy to use/drive 1) JEDEC qualified, Pb-free plating, Halogen free gate pin 1 Applications PFC stages, hard switching PWM stages and resonant switching source pin 3 PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 700 V DS j,max R 0.19 DS(on),max Q 73 nC g,typ I 66 A D,pulse E 400V 5.9 J oss Body diode di/dt 500 A/s Type / Ordering Code Package Marking Related Links IPW65R190E6 PG-TO247 IFX CoolMOS Webpage IPB65R190E6 PG-TO263 IFX Design tools IPI65R190E6 PG-TO262 65E6190 IPP65R190E6 PG-TO220 IPA65R190E6 PG-TO220 FullPAK 1) J-STD20 and JESD22 Rev. 2.1 Page 2 2018-02-28