The IPB020N10N5LF is an ultra-low loss, high-speed automotive N-Channel Trench MOSFET from Infineon Technologies. It is designed for applications that require high current, low voltage drop and high switching speeds. The device features an E-mode avalanche rating, improved dv/dt avalanche characteristics, and Integrated Powerfly for soft-switching. It provides switching times as low as 20ns, with a maximum gate charge of 14nC. It offers high reliability with an UIS rating up to 175A and a drain-source breakdown voltage of 900V, temperature stability up to 175°C, and low gate threshold voltage. The device is AEC-Q101 qualified and ideal for automotive applications including power train, body electronics and DC/DC converters.