IPB065N10N3 G Infineon

IPB065N10N3 G electronic component of Infineon
IPB065N10N3 G Infineon
IPB065N10N3 G MOSFETs
IPB065N10N3 G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IPB065N10N3 G MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPB065N10N3 G MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IPB065N10N3 G
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N Trench 100V 80A (Tc) 3.5V @ 90uA 6.5 mΩ @ 80A,10V TO-263-2 RoHS
Datasheet: IPB065N10N3 G Datasheet (PDF)
Price (USD)
1: USD 2.536 ea
Line Total: USD 2.54 
Availability : 0
  
QtyUnit Price
1$ 2.536
10$ 1.6254
30$ 1.3072
100$ 1.148
500$ 1.0762
1000$ 1.0446

Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.536
10$ 1.6254
30$ 1.3072
100$ 1.148
500$ 1.0762
1000$ 1.0446

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IPB065N10N3 G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPB065N10N3 G and other electronic components in the MOSFETs category and beyond.

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The Infineon IPB065N10N3 G is a MOSFET N Trench 100V 80A (Tc) 3.5V @ 90uA 6.5 mO @ 80A,10V TO-263-2 RoHS device. It is a surface mount transistor used in switched-mode power supplies and other high-current switching applications. This MOSFET is an enhancement-mode device constructed with Trench technology from Infineon with a drain-source voltage of 100V and an on-state drain current of up to 80A. It has a low gate-source voltage of 3.5V @ 90uA and a low drain-source On-state Resistance of 6.5 mO @ 80A. The package for the IPB065N10N3 G is TO-263-2, meeting the RoHS standard.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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