X-On Electronics has gained recognition as a prominent supplier of IPB083N15N5LFATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPB083N15N5LFATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPB083N15N5LFATMA1 Infineon

IPB083N15N5LFATMA1 electronic component of Infineon
IPB083N15N5LFATMA1 Infineon
IPB083N15N5LFATMA1 MOSFETs
IPB083N15N5LFATMA1  Semiconductors

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See Product Specifications
Part No. IPB083N15N5LFATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET TRENCH >=100V
Datasheet: IPB083N15N5LFATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.6321 ea
Line Total: USD 7.63 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 22 May to Wed. 28 May
MOQ : 1000
Multiples : 1000
1000 : USD 4.7612
2000 : USD 4.7134
3000 : USD 4.6669
4000 : USD 4.6204
5000 : USD 4.5739
6000 : USD 4.4526
10000 : USD 4.4087
20000 : USD 4.3635
50000 : USD 4.3209

0
Ship by Tue. 20 May to Thu. 22 May
MOQ : 1
Multiples : 1
1 : USD 7.6321
10 : USD 4.6653
25 : USD 4.3967
100 : USD 3.8297
250 : USD 3.7104
500 : USD 3.3523
1000 : USD 2.7455

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
LoadingGif
 
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We are delighted to provide the IPB083N15N5LFATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPB083N15N5LFATMA1 and other electronic components in the MOSFETs category and beyond.

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IPB083N15N5LF MOSFET TM DPAK OptiMOS 5 Linear FET , 150 V Features Ideal for hot-swap and e-fuse applications Very low on-resistance RDS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating RoHS compliant 1) Qualified according to JEDEC for target applications Halogen-free according to IEC61249-2-21 Drain Table 1 Key Performance Parameters Pin 2, Tab Parameter Value Unit V 150 V DS Gate Pin 1 RDS(on),max 8.3 m Source Pin 3 I 105 A D I pulse (V DS=56 V, tp=10 5.6 A ms) Type / Ordering Code Package Marking Related Links IPB083N15N5LF PG-TO 263-3 083N15LF - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.0, 2017-04-04TM OptiMOS 5 Linear FET , 150 V IPB083N15N5LF Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 11 Trademarks . 11 Disclaimer 11 Final Data Sheet 2 Rev. 2.0, 2017-04-04

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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