IPB200N25N3GATMA1 Infineon

Hot IPB200N25N3GATMA1 electronic component of Infineon
IPB200N25N3GATMA1 Infineon
IPB200N25N3GATMA1 MOSFETs
IPB200N25N3GATMA1  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of IPB200N25N3GATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPB200N25N3GATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IPB200N25N3GATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO263-3
Datasheet: IPB200N25N3GATMA1 Datasheet (PDF)
Price (USD)
1: USD 5.8068 ea
Line Total: USD 5.81 
Availability : 187
  
Ship by Fri. 22 Aug to Wed. 27 Aug
QtyUnit Price
1$ 5.8068
10$ 3.3688
30$ 3.042
100$ 2.7115
500$ 2.5584
1000$ 2.4893

Availability 73
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 42
Multiples : 1
QtyUnit Price
42$ 6.2062
50$ 5.2364
50$ 5.2052
60$ 4.3511


Availability 187
Ship by Fri. 22 Aug to Wed. 27 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 5.8068
10$ 3.3688
30$ 3.042
100$ 2.7115
500$ 2.5584
1000$ 2.4893


Availability 73
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 42
Multiples : 1
QtyUnit Price
42$ 6.2062
50$ 5.2364
50$ 5.2052
60$ 4.3511


Availability 2320
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 45
Multiples : 1
QtyUnit Price
45$ 5.863
50$ 5.824
200$ 5.4625
500$ 5.45


Availability 1940
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 74
Multiples : 1
QtyUnit Price
74$ 5.33
100$ 4.875
500$ 4.6094
1000$ 4.3593
10000$ 4.0937


Availability 42
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 43
Multiples : 1
QtyUnit Price
43$ 6.1565
50$ 5.2187
100$ 4.2221
500$ 4.1191
1000$ 4.0485


Availability 8225
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 46
Multiples : 1
QtyUnit Price
46$ 5.7118
48$ 5.4664
50$ 5.2581
100$ 4.8844
250$ 4.7363
500$ 4.6074
1000$ 4.4946
2500$ 4.3955
5000$ 4.3079

   
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Type Of Transistor
Drain-Source Voltage
On-State Resistance
Drain Current
Gate-Source Voltage
Power Dissipation
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We are delighted to provide the IPB200N25N3GATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPB200N25N3GATMA1 and other electronic components in the MOSFETs category and beyond.

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IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G TM OptiMOS 3 Power-Transistor Product Summary Features V 250 V DS N-channel, normal level R 20 mW DS(on),max Excellent gate charge x R product (FOM) DS(on) I 64 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Halogen-free according to IEC61249-2-21 Ideal for high-frequency switching and synchronous rectification Type IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G Package PG-TO263-3 PG-TO220-3 PG-TO262-3 Marking 200N25N 200N25N 200N25N Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25C Continuous drain current 64 A D C T =100C 50 C 2) I T =25C 256 Pulsed drain current D,pulse C E Avalanche energy, single pulse I =47A, R =25W 320 mJ AS D GS Reverse diode dv /dt dv /dt 10 kV/s Gate source voltage V 20 V GS P T =25C Power dissipation 300 W tot C T , T Operating and storage temperature -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 2) See figure 3 Rev. 2.5 page 1 2017-03-31IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 0.5 K/W thJC R minimal footprint - - 62 thJA Thermal resistance, junction - ambient 3) - - 40 6 cm2 cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =1mA Drain-source breakdown voltage 250 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =270A 2 3 4 GS(th) DS GS D V =200V, V =0V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25C j V =200V, V =0V, DS GS - 10 100 T =125C j Gate-source leakage current I V =20V, V =0V - 1 100 nA GSS GS DS Drain-source on-state resistance R V =10V, I =64A - 17.5 20 mW DS(on) GS D R Gate resistance - 2.4 - W G V >2 I R , DS D DS(on)max g Transconductance 61 122 - S fs I =64A D 3) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.5 page 2 2017-03-31

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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