Type IPB230N06L3 G IPP230N06L3 G OptiMOS 3 Power-Transistor Product Summary Features V 60 V DS Ideal for high frequency switching and sync. rec. R 23 mW DS(on),max Optimized technology for DC/DC converters I 30 A D Excellent gate charge x R product (FOM) DS(on) N-channel, logic level 100% avalanche tested Pb-free plating RoHS compliant 1) Qualified according to JEDEC for target applications Halogen-free according to IEC61249-2-21 Type IPB230N06L3 G IPP230N06L3 G Package PG-TO263-3 PG-TO220-3 Marking 230N06L 230N06L Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 2) I Continuous drain current T =25C 30 A D C T =100C 21 C 2) I T =25C 120 Pulsed drain current D,pulse C 3) E I =20A, R =25W 13 mJ Avalanche energy, single pulse AS D GS Gate source voltage V 20 V GS Power dissipation P T =25C 36 W tot C T , T Operating and storage temperature -55 ... 175 C j stg 1) J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Rev. 2.2 page 1 2012-12-19IPB230N06L3 G IPP230N06L3 G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 4.2 K/W thJC R Thermal resistance, minimal footprint - - 62 thJA 4) junction - ambient - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =1mA Drain-source breakdown voltage 60 - - V (BR)DSS GS D V V =V , I =11A Gate threshold voltage 1.2 1.7 2.2 GS(th) DS GS D V =60V, V =0V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25C j V =60V, V =0V, DS GS - 10 100 T =125C j I V =20V, V =0V Gate-source leakage current - 1 100 nA GSS GS DS R V =10V, I =30A Drain-source on-state resistance - 19.0 23 mW DS(on) GS D V =4.5V, I =15A - 28.6 40.8 GS D V =10V, I =30A, GS D Drain-source on-state resistance R - 18.7 23.0 DS(on) (SMD) V =4.5V, I =15A, GS D - 28.3 40.8 (SMD) Gate resistance R - 0.9 - W G V >2 I R , DS D DS(on)max g Transconductance 16 31 - S fs I =30A D 4) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.2 page 2 2012-12-19