IPB60R125CP TM CoolMOS Power Transistor Product Summary Features V T 650 V DS j,max Lowest figure-of-merit R xQ ON g R 0.125 DS(on),max Ultra low gate charge Q 53 nC g,typ Extreme dv/dt rated High peak current capability 1) Qualified according to JEDEC for target applications PG-TO263 Pb-free lead plating RoHS compliant CoolMOS CP is specially designed for: Hard switching topologies, for Server and Telecom Type Package Ordering Code Marking IPB60R125CP PG-TO263 SP000088488 6R125P Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25 C 25 A D C T =100 C 16 C 2) I T =25 C 82 Pulsed drain current D,pulse C E I =11 A, V =50 V Avalanche energy, single pulse 708 mJ AS D DD 2),3) E I =11 A, V =50 V 1.2 Avalanche energy, repetitive t AR D DD AR 2),3) I Avalanche current, repetitive t 11 A AR AR V =0...480 V 50 MOSFET dv /dt ruggedness dv /dt V/ns DS V Gate source voltage static 20 V GS 30 AC (f >1 Hz) T =25 C Power dissipation P 208 W tot C T , T -55 ... 150 Operating and storage temperature C j stg Rev. 1.0 page 1 2007-02-06IPB60R125CP Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I 16 Continuous diode forward current A S T =25 C C 2) I 82 Diode pulse current S,pulse 4) dv /dt 15 V/ns Reverse diode dv /dt Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 0.6 K/W thJC SMD version, device R on PCB, minimal -- 62 thJA footprint Thermal resistance, junction - ambient SMD version, device 2 on PCB, 6 cm cooling -35- 5) area Soldering temperature, T reflow MSL1 - - 260 C sold wave- & reflowsoldering allowed Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =250 A 600 - - V (BR)DSS GS D V V =V , I =1.1 mA Gate threshold voltage 2.5 3 3.5 GS(th) DS GS D V =600 V, V =0 V, DS GS Zero gate voltage drain current I -- 2A DSS T =25 C j V =600 V, V =0 V, DS GS -20- T =150 C j I V =20 V, V =0 V Gate-source leakage current - - 100 nA GSS GS DS V =10 V, I =16 A, GS D Drain-source on-state resistance R - 0.11 0.125 DS(on) T =25 C j =10 V, I =16 A, V GS D - 0.30 - T =150 C j Gate resistance R f =1 MHz, open drain - 2.1 - G Rev. 1.0 page 2 2007-02-06