IPB60R165CP CoolMOS Power Transistor Product Summary Features V T 650 V DS j,max Lowest figure-of-merit R xQ ON g R 0.165 DS(on),max Ultra low gate charge Q 39 nC g,typ Extreme dv/dt rated High peak current capability 1) Qualified according to JEDEC for target applications PG-TO263 Pb-free lead plating RoHS compliant CoolMOS CP is specially designed for: Hard switching topologies for Server and Telecom Type Package Ordering Code Marking IPB60R165CP PG-TO263 SP000096439 6R165P Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C 21 Continuous drain current A D C T =100 C 13 C 2) I T =25 C 61 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =7.9 A, V =50 V 522 mJ AS D DD 2),3) E I =7.9 A, V =50 V 0.79 Avalanche energy, repetitive t AR AR D DD 2),3) I 7.9 Avalanche current, repetitive t A AR AR V =0...480 V 50 MOSFET dv /dt ruggedness dv /dt V/ns DS Gate source voltage V static 20 V GS 30 AC (f >1 Hz) Power dissipation P T =25 C 192 W tot C T , T -55 ... 150 Operating and storage temperature C j stg Rev. 2.1 page 1 2009-06-05IPB60R165CP Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I 12 Continuous diode forward current A S T =25 C C 2) I 61 Diode pulse current S,pulse 4) dv /dt 15 V/ns Reverse diode dv /dt Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 0.65 K/W thJC SMD version, device Thermal resistance, junction - R on PCB, minimal -- 62 thJA ambient footprint SMD version, device 2 on PCB, 6 cm cooling 35 5) area Soldering temperature, T reflow MSL 1 - - 260 C sold reflowsoldering Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =250 A Drain-source breakdown voltage 600 - - V (BR)DSS GS D V V =V , I =0.79 mA Gate threshold voltage 2.5 3 3.5 GS(th) DS GS D V =600 V, V =0 V, DS GS I Zero gate voltage drain current -- 1A DSS T =25 C j V =600 V, V =0 V, DS GS -10- T =150 C j I V =20 V, V =0 V Gate-source leakage current - - 100 nA GSS GS DS V =10 V, I =12 A, GS D R Drain-source on-state resistance - 0.15 0.165 DS(on) T =25 C j V =10 V, I =12 A, GS D - 0.40 - T =150 C j R Gate resistance f =1 MHz, open drain - 1.9 - G Rev. 2.1 page 2 2007-11-22