IPB60R600CP TM CoolMOS Power Transistor Product Summary Features V T 650 V DS j,max Lowest figure-of-merit R x Q ON g R T =25C 0.6 DS(on),max j Ultra low gate charge Q 21 nC g,typ Extreme dv/dt rated High peak current capability 1) Qualified according to JEDEC for target applications PG-TO263 Pb-free lead plating RoHS compliant CoolMOS CP is designed for: Hard switching SMPS topologies Type Package Marking IPB60R600CP PG-TO263 6R600P Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25 C 6.1 A D C T =100 C 3.8 C 2) I T =25 C 15 Pulsed drain current D,pulse C E I =2.2 A, V =50 V Avalanche energy, single pulse 144 mJ AS D DD 2),3) E I =2.2 A, V =50 V 0.2 Avalanche energy, repetitive t AR D DD AR 2),3) I 2.2 Avalanche current, repetitive t A AR AR MOSFET dv /dt ruggedness dv /dt V =0...480 V 50 V/ns DS V 20 Gate source voltage static V GS AC (f >1 Hz) 30 P T =25 C Power dissipation 60 W tot C Operating and storage temperature T , T -55 ... 150 C j stg Rev.2.0 page 1 2008-02-15IPB60R600CP Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I 3.3 Continuous diode forward current A S T =25 C C 2) I 15 Diode pulse current S,pulse 4) dv /dt 15 V/ns Reverse diode dv /dt Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R - - 2.1 K/W Thermal resistance, junction - case thJC R leaded - - 62 thJA SMD version, device Thermal resistance, junction - R on PCB, minimal -- 62 thJA ambient footprint SMD version, device 2 on PCB, 6 cm cooling -35- 3) area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =250 A Drain-source breakdown voltage 600 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =220A 2.5 3 3.5 GS(th) DS GS D V =600 V, V =0 V, DS GS I Zero gate voltage drain current -- 1A DSS T =25 C j V =600 V, V =0 V, DS GS -10- T =150 C j Gate-source leakage current I V =20 V, V =0 V - - 100 nA GSS GS DS V =10 V, I =3.3 A, GS D R Drain-source on-state resistance - 0.54 0.6 DS(on) T =25 C j V =10 V, I =3.3 A, GS D - 1.5 - T =150 C j Gate resistance R f =1 MHz, open drain - 1.5 - G Rev.2.0 page 2 2008-02-15