IPB65R190C7 Infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPB65R190C7 Data Sheet Rev. 2.1 Final Power Management & Multimarket650V CoolMOS C7 Power Transistor IPB65R190C7 DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and tab pioneered by Infineon Technologies. CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio 2 provides all benefits of fast switching superjunction MOSFETs offering 1 better efficiency, reduced gate charge, easy implementation and 3 outstanding reliability. Features Drain Increased MOSFET dv/dt ruggedness Pin 2, tab Better efficiency due to best in class FOM R *E and R *Q DS(on) oss DS(on) g Best in class RDS(on) /package Easy to use/drive Gate Pin 1 Pb-free plating, halogen free mold compound Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22) Source Pin 3 Benefits Enabling higher system efficiency Enabling higher frequency / increased power density solutions System cost / size savings due to reduced cooling requirements Higher system reliability due to lower operating temperatures Applications PFC stages and hard switching PWM stages for e.g. Computing, Server, Telecom, UPS and Solar. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit VDS Tj,max 700 V RDS(on),max 190 m Q 23 nC g.typ I 49 A D,pulse E 400V 2.7 J oss Body diode di/dt 55 A/s Type / Ordering Code Package Marking Related Links IPB65R190C7 PG-TO 263 65C7190 see Appendix A Final Data Sheet 2 Rev. 2.1, 2013-10-21