X-On Electronics has gained recognition as a prominent supplier of IPB65R190CFD7AATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPB65R190CFD7AATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.
We are delighted to provide the IPB65R190CFD7AATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPB65R190CFD7AATMA1 and other electronic components in the MOSFETs category and beyond.
IPB65R190CFD7A MOSFET DPAK 650V CoolMOS CFD7A SJ Power Device 650V CoolMOS CFD7A is Infineon s latest generation of market leading tab automotive qualified high voltage CoolMOS MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFD7A series provides for an integrated fast body diode and can be used for PFC and resonant switching topologies like the ZVS phase-shift full-bridge and LLC. 2 1 3 Features Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Q rr Lowest FOM R *Q and R *E DS(on) g DS(on) oss 100% avalanche tested Drain Pin 2, Tab Best-in-class R in SMD and THD packages DS(on) *1 Gate Benefits Pin 1 *2 Optimized for higher battery voltages up to 475 V thanks to further improved robustness Source *1: Internal body diode *2: Integrated ESD diode Pin 3 Lower switching losses enabling higher switching frequencies High quality and reliability Increased efficiency in light load and full load conditions Potential applications Suitable for PFC and DC-DC stages for: Unidirectional and bidirectional DC-DC converters, On-Board battery Chargers Product validation Qualified according to AEC Q101 Please note: For production part approval process (PPAP) release we propose to share application related information during an early design phase to avoid delays in PPAP release. Please contact Infineon sales office. Table 1 Key Performance Parameters Parameter Value Unit V 650 V DS R 190 m DS(on),max Q 28 nC g,typ I 55 A D,pulse E 400V 3.7 J oss Body diode diF/dt 1300 A/s Type / Ordering Code Package Marking Related Links IPB65R190CFD7A PG-TO263-3 65A190F7 see Appendix A Final Data Sheet 1 Rev. 2.1, 2021-11-24650V CoolMOS CFD7A SJ Power Device IPB65R190CFD7A Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.1, 2021-11-24