Final Data Sheet IPB80P04P4-05 IPI80P04P4-05, IPP80P04P4-05 OptiMOS -P2 Power-Transistor Product Summary V -40 V DS R (SMD Version) 4.9 mW DS(on) I -80 A D Features P-channel - Normal Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPB80P04P4-05 PG-TO263-3-2 4P0405 IPI80P04P4-05 PG-TO262-3-1 4P0405 IPP80P04P4-05 PG-TO220-3-1 4P0405 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit T =25C, C 1) I -80 A Continuous drain current D V =-10V GS T =100C, C -80 2) V =-10V GS 2) I T =25C -320 Pulsed drain current D,pulse C E I =-40A Avalanche energy, single pulse 64 mJ AS D I Avalanche current, single pulse - -80 A AS Gate source voltage V - 20 V GS P T =25 C Power dissipation 125 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2011-04-18Final Data Sheet IPB80P04P4-05 IPI80P04P4-05, IPP80P04P4-05 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 1.2 K/W thJC Thermal resistance, junction - R - - - 62 thJA ambient, leaded R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = -1mA Drain-source breakdown voltage -40 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =-250A -2.0 -3.0 -4.0 GS(th) DS GS D V =-32V, V =0V, DS GS I Zero gate voltage drain current - -0.05 -1 A DSS T =25C j V =-32V, V =0V, DS GS - -20 -200 2) T =125C j I V =-20V, V =0V Gate-source leakage current - - -100 nA GSS GS DS Drain-source on-state resistance R V =-10V, I =-80A - 4.0 5.2 mW DS(on) GS D V =-10V, I =-80A, GS D - 3.7 4.9 SMD version Rev. 1.0 page 2 2011-04-18