X-On Electronics has gained recognition as a prominent supplier of IPD053N06NATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPD053N06NATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPD053N06NATMA1 Infineon

IPD053N06NATMA1 electronic component of Infineon
IPD053N06NATMA1 Infineon
IPD053N06NATMA1 MOSFETs
IPD053N06NATMA1  Semiconductors

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See Product Specifications
Part No. IPD053N06NATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO252-3
Datasheet: IPD053N06NATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7087 ea
Line Total: USD 0.71 
Availability - 14839
Ship by Fri. 13 Jun to Tue. 17 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6715
Ship by Tue. 17 Jun to Mon. 23 Jun
MOQ : 375
Multiples : 1
375 : USD 0.6948
380 : USD 0.6844
386 : USD 0.674
392 : USD 0.6636
399 : USD 0.6532
500 : USD 0.6429
1000 : USD 0.6081
3000 : USD 0.5981
6000 : USD 0.5881

14839
Ship by Fri. 13 Jun to Tue. 17 Jun
MOQ : 1
Multiples : 1
1 : USD 0.7087
10 : USD 0.6837
25 : USD 0.6564
100 : USD 0.6017
250 : USD 0.6017
500 : USD 0.6017
1000 : USD 0.6017
2500 : USD 0.5775

4531
Ship by Tue. 17 Jun to Mon. 23 Jun
MOQ : 363
Multiples : 1
363 : USD 0.718

6715
Ship by Tue. 17 Jun to Mon. 23 Jun
MOQ : 380
Multiples : 1
380 : USD 0.6844
386 : USD 0.674
392 : USD 0.6636
399 : USD 0.6532
500 : USD 0.6429
1000 : USD 0.6081
3000 : USD 0.5981
6000 : USD 0.5881

   
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Type Of Transistor
Drain Current
Gate-Source Voltage
Drain-Source Voltage
On-State Resistance
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IPD053N06NATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPD053N06NATMA1 and other electronic components in the MOSFETs category and beyond.

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Type IPD053N06N TM OptiMOS Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. V 60 V DS 100% avalanche tested R 5.3 mW DS(on),max Superior thermal resistance I 45 A D N-channel Q nC OSS 32 1) Qualified according to JEDEC for target applications Q (0V..10V) nC G 27 Pb-free lead plating RoHS compliant Halogen-free according to IEC61249-2-21 PG-TO252-3 Type Package Marking IPD053N06N PG-TO252-3 053N06N Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I V =10 V, T =25C Continuous drain current 45 A D GS C V =10 V, T =100C 45 GS C V =10 V, T =25C, GS C 18 R =50K/W thJA 2) I T =25C 180 Pulsed drain current D,pulse C 3) E I =45A, R =25W 60 mJ Avalanche energy, single pulse AS D GS V Gate source voltage 20 V GS 1) J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information 4) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev.2.2 page 1 2012-12-20IPD053N06N Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit P T =25C Power dissipation 83 W tot C T =25 C, A 3.0 R =50K/W thJA Operating and storage temperature T , T -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case bottom - - 1.8 K/W thJC R Device on PCB minimal footprint - - 62 thJA 4) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =1mA Drain-source breakdown voltage 60 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =36A 2.1 2.8 3.3 GS(th) DS GS D V =60V, V =0V, DS GS Zero gate voltage drain current I - 0.5 1 A DSS T =25C j V =60V, V =0V, DS GS - 10 100 T =125C j Gate-source leakage current I V =20V, V =0V - 10 100 nA GSS GS DS Drain-source on-state resistance R V =10V, I =45A - 4.5 5.3 mW DS(on) GS D V =6V, I =12A - 6.0 8.0 GS D R Gate resistance - 1.5 2.3 W G V >2 I R , DS D DS(on)max g Transconductance 38 75 - S fs I =45A D Rev.2.2 page 2 2012-12-20

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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