IPD30N03S4L-09 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 9.0 mW DS(on),max I 30 A D Features PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD30N03S4L-09 PG-TO252-3-11 4N03L09 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I T =25C, V =10V 30 A Continuous drain current D C GS 2) 30 T =100C, V =10V C GS 2) I T =25C 120 Pulsed drain current D,pulse C 2) E I =30A 28 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 30 A AS Gate source voltage V - 16 V GS Power dissipation P T =25C 42 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 - Rev. 1.1 page 1 2010-10-05IPD30N03S4L-09 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 3.6 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 30 - - V (BR)DSS GS D V V =V , I =13A Gate threshold voltage 1.0 1.5 2.2 GS(th) DS GS D V =30V, V =0V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25C j V =30V, V =0V, DS GS - 10 100 2) T =125C j I V =16V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =4.5V, I =15A Drain-source on-state resistance - 10.4 13.5 mW DS(on) GS D V =10V, I =30A - 7.3 9.0 GS D Rev. 1.1 page 2 2010-10-05