IPD35N10S3L-26 OptiMOS -T Power-Transistor Product Summary V 100 V DS R 26 mW DS(on),max I 35 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD35N10S3L-26 PG-TO252-3-11 3N10L26 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C, V =10V Continuous drain current 35 A D C GS 1) 25 T =100C, V =10V C GS 1) I T =25C 140 Pulsed drain current D,pulse C 1) E I =17A 175 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse 35 A AS 2) V 20 V Gate source voltage GS Power dissipation P T =25C 71 W tot C T , T Operating and storage temperature -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Rev. 1.1 page 1 2011-10-06IPD35N10S3L-26 Parameter Symbol Conditions Values Unit min. typ. max. 1) Thermal characteristics Thermal resistance, junction - case R - - 2.1 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 100 - - V (BR)DSS GS D V V =V , I =39A Gate threshold voltage 1.2 1.7 2.4 GS(th) DS GS D V =80V, V =0V, DS GS I Zero gate voltage drain current - 0.01 0.1 A DSS T =25C j V =80V, V =0V, DS GS - 1 10 1) T =125C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =4.5V, I =35A Drain-source on-state resistance - 24.5 31.9 mW DS(on) GS D V =10 V, I =35 A - 20.0 24.0 GS D Rev. 1.1 page 2 2011-10-06