IPD50N04S3-09 OptiMOS -T Power-Transistor Product Summary V 40 V DS R 9 m DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N04S3-09 PG-TO252-3-11 3N0409 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) Continuous drain current I 50 A D T =25 C, V =10 V C GS T =100 C, C 43 2) V =10 V GS 2) I T =25 C 200 Pulsed drain current D,pulse C 2) E I =25 A 140 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I 50 A AS Gate source voltage V 20 V GS P T =25 C Power dissipation 63 W tot C T , T Operating and storage temperature -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Rev. 1.1 page 1 2009-11-03IPD50N04S3-09 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - 2.4 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I = 1 mA Drain-source breakdown voltage 40 - - V (BR)DSS GS D V V =V , I =28 A Gate threshold voltage 2.1 3.0 4.0 GS(th) DS GS D V =40 V, V =0 V, DS GS I Zero gate voltage drain current -- 1A DSS T =25 C j V =40 V, V =0 V, DS GS - - 100 2) T =125 C j I V =20 V, V =0 V Gate-source leakage current - - 100 nA GSS GS DS R V =10 V, I =50 A Drain-source on-state resistance - 7.5 9.0 m DS(on) GS D Rev. 1.1 page 2 2009-11-03