IPD50R399CP TM CoolMOS Power Transistor PPrroodduucctt SSuummmmaarryy Features VV 99NN ////** PP 11 SSii V *EL HI < =JG E< C G I 0 M / - , Y RR **(-(-3333 >>MM aa && SSii V 3 BIG7 BEL =7I 9>7G= QQ ++11 == YY&&eejjbb V MIG C : K : I G7I : V & => F 7A 9JGG DI 97F78 B IN V .8 <G B 7: FB7I D= 0 E& 1 9EC FB 7DI + V / J7B < : 799EG: D= IE ( JJAA NNII,,//,, CoolMOS CP is designed for: V & 7G: 7D: HE<IHL I9> D= 1+ .1 IEFEBE= H V + . <EG *7C F 7BB7HI V .5 + <EG *7C F 7BB7HI . 7D: * 24 TTyyppee PPaacckkaaggee MMaarrkkiningg CJ>/*L-33=J JA NI,/, /L-33J Maximum ratings, 7I T Y JDB HH EI> GL H HF 9 < : Parameter Symbol Conditions Value Unit I T Y 3 EDI DJEJH : G7 D 9JGG DI > = T Y 0 = , I T Y ,* .JBH : : G7 D 9JGG DI >&bf dW = E I V 4 K7B7D9> D G=N H D=B FJBH ,+/ D M > >> , &- E I V 4 *(-- K7B7D9> D G=N G F I I K t L > >> L , &- I -(- K7B7D9> 9JGG DI G F I I K t L L V 4 /* + - 1 2 : v )Vt GJ== : D HH : v )Vt P) d >M V v,* % 7I HEJG9 KEBI7= deSe U P AM < & O v-* P T Y .EL G : HH F7I ED 2- Q eae = T T - F G7I D= 7D: HIEG7= I C F G7IJG u= deY 00 KK FF77== IPD50R399CP Maximum ratings, 7I T Y JDB HH EI> GL H HF 9 < : Parameter Symbol Conditions Value Unit I .(3 EDI DJEJH : E: <EGL7G: 9JGG DI M T Y = , I ,* E: FJBH 9JGG DI M&bf dW . Vv )Vt +/ P) d 0 K GH : E: : v )Vt Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics 2> GC 7B G H HI7D9 JD9I ED 97H R +(/ E)Q eZD= 2> GC 7B G H HI7D9 JD9I ED R WSVWV 0, eZD S T W e 1EB: G D= I C F G7IJG C C D T ,0* u= da V G <BELHEB: G D= <GEC 97H <EG H Electrical characteristics, 7I T Y JDB HH EI> GL H HF 9 < : Static characteristics >c>cSS ddaaffccUUWW TTccWWSS VVaah h ggaa eSeSYYWW VV VV 77** PP II 77,,//** ww //**** PP <<LL >>MMMM AAMM >> % 7I I>G H>EB: KEBI7= V V 7V I C ,(/ - -(/ AM eZ >M AM > V 4 V 4 >M AM 6 GE =7I KEBI7= : G7 D 9JGG DI I + w >MM T Y V 4 V 4 >M AM +* T Y I V 4 V 4 % 7I HEJG9 B 7A7= 9JGG DI +** AMM AM >M V 4 I AM >G7 D HEJG9 ED HI7I G H HI7D9 R *(-0 *(-33 >M a T Y V 4 I AM > *(3* T Y R % 7I G H HI7D9 f + & O EF D : G7 D ,(, A 00 KK FF77==