MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPD50R500CE Data Sheet Rev. 2.2 Final Power Management & Multimarket500V CoolMOS CE Power Transistor IPD50R500CE DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use and 2 1 offering the best cost down performance ratio available on the market. 3 Features Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Drain Easy to use/drive Pin 2 Pb-free plating, Halogen free mold compound Qualified for standard grade applications Gate Pin 1 Applications Source Pin 3 PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV and indoor lighting. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 550 V DS j,max R 0.5 DS(on),max Q 18.7 nC g.typ ID,pulse 24 A E 400V 2.02 J oss Body diode di/dt 500 A/s Type / Ordering Code Package Marking Related Links IPD50R500CE PG-TO 252 50S500CE see Appendix A Final Data Sheet 2 Rev. 2.2, 2015-11-17