IPD600N25N3GATMA1 Infineon

IPD600N25N3GATMA1 electronic component of Infineon
IPD600N25N3GATMA1 Infineon
IPD600N25N3GATMA1 MOSFETs
IPD600N25N3GATMA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IPD600N25N3GATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPD600N25N3GATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IPD600N25N3GATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET TRENCH >=100V
MOSFET: N-channel, 600V, 25A, TDSON-8Z, low gate charge.
Datasheet: IPD600N25N3GATMA1 Datasheet (PDF)
Price (USD)
1: USD 3.4875 ea
Line Total: USD 3.49 
Availability : 3981
  
Ship by Thu. 20 Nov to Mon. 24 Nov
QtyUnit Price
1$ 3.4875
10$ 2.1965
100$ 1.529
500$ 1.353
1000$ 1.331
2500$ 1.21
5000$ 1.155

Availability 9700
Ship by Mon. 24 Nov to Fri. 28 Nov
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 2.35


Availability 3981
Ship by Thu. 20 Nov to Mon. 24 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.4875
10$ 2.1965
100$ 1.529
500$ 1.353
1000$ 1.331
2500$ 1.21
5000$ 1.155


Availability 7275
Ship by Mon. 24 Nov to Fri. 28 Nov
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 1.3126
5000$ 1.3095


Availability 1749
Ship by Mon. 24 Nov to Fri. 28 Nov
MOQ : 72
Multiples : 1
QtyUnit Price
72$ 3.653
104$ 2.522
106$ 2.47
500$ 1.741

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Packaging
Brand
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We are delighted to provide the IPD600N25N3GATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPD600N25N3GATMA1 and other electronic components in the MOSFETs category and beyond.

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The IPD600N25N3GATMA1 is a two-channel N-channel insulated gate bipolar transistor (IGBT) module from Infineon. It is designed for use in medium- and high-power applications such high-power rectifier designs and high-speed motor control applications. It features low on-state losses, high switching speeds and high blocking voltage, along with reverse-blocking capability, and adapted pinning to enable more compact designs. The module features two N-channel IGBTs, embedded fast-recovery body diode and parallel emitter-controlled thyristors, in a TO-247 package with a common source terminal.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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