X-On Electronics has gained recognition as a prominent supplier of IPD60N10S4L12ATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPD60N10S4L12ATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPD60N10S4L12ATMA1 Infineon

IPD60N10S4L12ATMA1 electronic component of Infineon
IPD60N10S4L12ATMA1 Infineon
IPD60N10S4L12ATMA1 MOSFETs
IPD60N10S4L12ATMA1  Semiconductors

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See Product Specifications
Part No. IPD60N10S4L12ATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: Infineon Technologies MOSFET N-Ch 100V 60A DPAK-2
Datasheet: IPD60N10S4L12ATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.6375 ea
Line Total: USD 1.64 
Availability - 4966
Ship by Tue. 03 Jun to Thu. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1662
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 267
Multiples : 1
267 : USD 0.9746
307 : USD 0.8494
319 : USD 0.8157
348 : USD 0.7483
353 : USD 0.7377
500 : USD 0.7233
1000 : USD 0.6817

2425
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 2500
Multiples : 2500
2500 : USD 0.675

4966
Ship by Tue. 03 Jun to Thu. 05 Jun
MOQ : 1
Multiples : 1
1 : USD 1.6375
10 : USD 1.212
100 : USD 0.8899
500 : USD 0.7755
1000 : USD 0.6501
2500 : USD 0.6204
5000 : USD 0.6204

1662
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 307
Multiples : 1
307 : USD 0.8494
319 : USD 0.8157
348 : USD 0.7483
353 : USD 0.7377
500 : USD 0.7233
1000 : USD 0.6817

780
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 409
Multiples : 1
409 : USD 1.1476
500 : USD 1.033
1000 : USD 0.9525
10000 : USD 0.8492
100000 : USD 0.7116

4850
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 2500
Multiples : 2500
2500 : USD 0.6484

3385
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 409
Multiples : 1
409 : USD 1.1476
500 : USD 1.033
1000 : USD 0.9525
10000 : USD 0.8492
100000 : USD 0.7116

495
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 175
Multiples : 1
175 : USD 1.4933
183 : USD 1.4265
250 : USD 1.3693
500 : USD 1.2691

4692
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 381
Multiples : 1
381 : USD 0.6838
386 : USD 0.6747
392 : USD 0.6643
411 : USD 0.6331
1000 : USD 0.595
2000 : USD 0.57

2425
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 2500
Multiples : 2500
2500 : USD 0.675

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IPD60N10S4L12ATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPD60N10S4L12ATMA1 and other electronic components in the MOSFETs category and beyond.

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IPD60N10S4L-12 TM OptiMOS -T2 Power-Transistor Product Summary V 100 V DS R 12 mW DS(on),max I 60 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified TAB MSL1 up to 260C peak reflow 175C operating temperature 1 3 Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD60N10S4L-12 PG-TO252-3-313 4N10L12 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C, V =10V Continuous drain current 60 A D C GS 1) 43 T =100C, V =10V C GS 1) I T =25C 240 Pulsed drain current D,pulse C 1) E I =30A 120 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 40 A AS Gate source voltage V - +/-16 V GS Power dissipation P T =25C 94 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2011-11-30IPD60N10S4L-12 Parameter Symbol Conditions Values Unit min. typ. max. 1) Thermal characteristics Thermal resistance, junction - case R - - 1.6 K/W thJC Thermal resistance, junction - R - - 62 thJA ambient, leaded R SMD version, device on PCB minimal footprint - - 62 thJA 2 2) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =1mA Drain-source breakdown voltage 100 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =46A 1.1 1.6 2.1 GS(th) DS GS D Zero gate voltage drain current I V =100V, V =0V - 0.01 1 A DSS DS GS V =100V, V =0V, DS GS - 1 100 2) T =125C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =4.5V, I =30A - 12.3 15 mW DS(on) GS D V =10V, I =60A - 9.8 12 GS D Rev. 1.0 page 2 2011-11-30

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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