IPD60R1K4C6ATMA1 Infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPD60R1K4C6 Data Sheet Rev. 2.3 Final Industrial & Multimarket.((H6YYV BEc6.CY O F KX S Y =C7.(D)>,6. % /BM LEKNEJI >bb HILo f T eXib hg baTel gXV ab bZl Ybe Z ib gTZX cbjXe HILA Mf WXf ZaXW TVVbeW aZ gb g X fhcXe haVg ba LE% ce aV c X TaW c baXXeXW Ul DaY aXba MXV ab bZ Xf) >bb HILo >1 fXe Xf Vb U aXf g X XkcXe XaVX bY g X XTW aZ LE HILA M fhcc Xe j g Z V Tff aabiTg ba) M X eXfh g aZ WXi VXf cebi WX T UXaXY gf bY T YTfg fj gV aZ LE HILA M j X abg fTVe Y V aZ XTfX bY hfX) kgeX X l bj fj gV aZ TaW VbaWhVg ba bffXf T X fj gV aZ Tcc VTg baf XiXa beX XYY V Xag beX Vb cTVg Z gXe TaW Vbb Xe) AL>EI ZSX* 0B>NOLBM n kgeX X l bj bffXf WhX gb iXel bj AIH KLYVU CO TaW VYY D>NB n OXel Z Vb hgTg ba ehZZXWaXff ZSX) n Tfl gb hfX*We iX Fully qualified according to JEDEC for Industrial Applica tions MJOL B ZSX + Halogen free mold compound, Pb-free plating -KKGE >NEJIM JA> fgTZXf TeW fj gV aZ JPH fgTZXf TaW eXfbaTag fj gV aZ JPH fgTZXf Ybe X)Z) J> L iXeUbk <WTcgXe G> J J MO G Z g aZ LXeiXe MX XVb and NJL) )72.>2 9 2 % = (+% , <.=.7727694 52 >2 3 32==6 2 /2.1> 9 52 4. 2 = >2<.=. 2 28 < 72> 6> 4292=.77A =20 8829121 FKLVO) >ObCO PY WKXMOCK KWO O 6>L>HBNBL <>GOB IEN & /.) G 7E R%TI % * - 7VU %TI 2 - U6 O%Z W 1 4 7%W SYM /++O , rE VYY =bWl W bWX W)(L* .)) 4(bY FbZO B NO SXQ6YNO CKMUKQO K USXQ DOVK ON SXU =B7/)D* -6/ B &FA+.+ /D* -6/ DAQ >1 JebWhVg =e XY =AQ >1 JbegYb b DAQ >bb HIL PXUcTZX DAQ Xf Za gbb f A aT TgT L XXg 2- KXi) -)+ -+,+(+2(,4 Final Data Sheet Rev. 2.3, 2020-05-20