X-On Electronics has gained recognition as a prominent supplier of IPD60R280PFD7SAUMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPD60R280PFD7SAUMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPD60R280PFD7SAUMA1 Infineon

IPD60R280PFD7SAUMA1 electronic component of Infineon
IPD60R280PFD7SAUMA1 Infineon
IPD60R280PFD7SAUMA1 MOSFETs
IPD60R280PFD7SAUMA1  Semiconductors

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See Product Specifications
Part No. IPD60R280PFD7SAUMA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET CONSUMER
Datasheet: IPD60R280PFD7SAUMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.7816 ea
Line Total: USD 1.78 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 04 Jul to Wed. 09 Jul
MOQ : 1
Multiples : 1
1 : USD 2.6614
10 : USD 2.3026
30 : USD 2.0789
100 : USD 1.8495
500 : USD 1.746
1000 : USD 1.7016

0
Ship by Wed. 25 Jun to Fri. 27 Jun
MOQ : 1
Multiples : 1
1 : USD 1.7816
10 : USD 1.1873
100 : USD 0.8169
500 : USD 0.6851
1000 : USD 0.6078
2500 : USD 0.5805
5000 : USD 0.5805

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IPD60R280PFD7SAUMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPD60R280PFD7SAUMA1 and other electronic components in the MOSFETs category and beyond.

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IPD60R280PFD7S MOSFET DPAK 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor drive, lighting, etc. The new series provides all the benefits of a fast switching Superjunction 2 1 MOSFET, combined with an excellent price/performance ratio and state of the art ease-of-use level. The technology meets highest efficiency 3 standards and supports high power density, enabling customers going towards very slim designs. Drain Pin 2, Tab Features Extremely low losses due to very low FOM R *Q and R *E DS(on) g DS(on) oss *1 Gate Low switching losses E , excellent thermal behavior oss Pin 1 *2 Fast body diode Wide range portfolio of R and package variations DS(on) Source *1: Internal body diode Integrated zener diode *2: Integrated ESD diode Pin 3 Benefits Enables high power density designs and small form factors Enables efficiency gains at higher switching frequencies Excellent commutation ruggedness Easy to select right parts and optimize the design High ESD ruggedness Potential applications Recommended for ZVS topologies used in high density chargers, adapters, lighting and motor drives applications, etc. Product validation Qualified according to JEDEC Standard Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 650 V DS j,max R 280 m DS(on),max Q 15.3 nC g,typ I 31 A D,pulse Eoss 400V 2.0 J Body diode di /dt 1300 A/s F ESD Class (HBM) 2 - Type / Ordering Code Package Marking Related Links IPD60R280PFD7S PG-TO 252-3 60S280D7 see Appendix A Final Data Sheet 1 Rev. 2.0, 2019-09-27600V CoolMOS PFD7 SJ Power Device IPD60R280PFD7S Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.0, 2019-09-27

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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