MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 600V CoolMOS CE Power Transistor IPx60R650CE Data Sheet Rev. 2.0 Final Power Management & Multimarket600V CoolMOS CE Power Transistor IPD60R650CE, IPA60R650CE DPAK TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use and Drain offering the best cost down performance ratio available on the market. Pin 2, Tab Features Gate Pin 1 Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Source Pin 3 Easy to use/drive Pb-free plating, Halogen free mold compound Qualified for consumer grade applications Applications PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV and Lighting. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 650 V DS j,max R 650 m DS(on),max Q 20.5 nC g.typ ID,pulse 19 A E 400V 1.9 J oss Body diode di/dt 500 A/s Type / Ordering Code Package Marking Related Links IPD60R650CE PG-TO 252 6R650CE see Appendix A IPA60R650CE PG-TO 220 FullPAK Final Data Sheet 2 Rev. 2.0, 2014-09-25