MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V 600V CoolMOS E6 Power Transistor IPx60R750E6 Data Sheet Rev. 2.3 Final Power Management & Multimarket- G5XXU ADb7-BX NZEZJW R XZ <B6- C., 7- <BB- C., 7- 48.* 9+) 1* % 0DOBNGMPGLK =bb GILo f T eXib hg baTel gXV ab bZl Ybe Z ib gTZX cbjXe GIL Mf& WXf ZaXW TVVbeW aZ gb g X fhcXe haVg ba LD ce aV c X TaW c baXXeXW Ul CaY aXba MXV ab bZ Xf( =bb GILo 0 fXe Xf Vb U aXf g X XkcXe XaVX bY g X XTW aZ LD GIL M fhcc Xe j g Z V Tff aabiTg ba( M X bYYXeXW WXi VXf cebi WX T UXaXY gf bY T YTfg fj gV aZ LD GIL M j X abg fTVe Y V aZ XTfX bY hfX( kgeX X l bj fj gV aZ TaW VbaWhVg ba bffXf T X fj gV aZ Tcc VTg bafXiXa beXXYY V Xag& beXVb cTVg& Z gXe& TaWVbb Xe( 2D PQNDO n kgeX X l bj bffXf WhX gb iXel bj IGKKXUT BNTaW UXX CN GK n OXel Z Vb hgTg ba ehZZXWaXff YRW) n Tfl gbhfX)We iX * + >8786 dhT Y XW& JU YeXX c Tg aZ& T bZXa YeXX F PD YRW( .MMIGB PGLKO J = fgTZXf& TeW fj gV aZ JPG fgTZXf TaW eXfbaTag fj gV aZ OLQNBD YRW * JPG fgTZXf Ybe X(Z( J= L iXeUbk& WTcgXe& F=> J>J MO& F Z g aZ& LXeiXe& MX XVb and NJL( J XTfXabgX4 beGIL McTeT X aZg XhfXbYYXee gXUXTWfbag X ZTgXbe fXcTeTgX gbgX cb Xf f ZXaXeT l eXVb XaWXW( EJKUN( =NaBNZOXZVJWLNBJZJVN NZ 8 N JDPDN > IQD =KGP 9 & /.) F 7D Q%SH % ) 0. 7UT %SH *0 + T6 N%Y V *. 0 4 7%VZRXL 9 .**O +(0 rD UXX <bWl W bWX W)(K* .)) 4(aX EaYN&AZMNZRWP5XMN BJLTJPN JZTRWP CNUJ NM>RWT =A7/)C0.)8/ A &E +.+ C Q =bb GIL PXUcTZX =AA/)C0.)8/ A &E ++) /C0.)8/ C Q >Xf Za gbb f CJ 0*K1/* 0 JA MI,,* h J E + D LM>,* TaWD L>,, , XkVXcgbY JA MI,/, Rev. 2.3 Page 2 2018-02-28