MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V 650V CoolMOS E6 Power Transistor IPD65R250E6 Data Sheet Rev. 2.2 Final Industrial & Multimarket650V CoolMOS E6 Power Transistor IPD65R250E6 DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, 2 1 lighter and cooler. 3 Features Extremely low losses due to very low FOM Rdson*Qg and Eoss Drain Very high commutation ruggedness Pin 2 Easy to use/drive Pb-free plating, Halogen free mold compound Qualified for industrial grade applications according to JEDEC (J-STD20 Gate Pin 1 and JESD22) Source Pin 3 Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Table 1 Key Performance Parameters Parameter Value Unit VDS Tj max 700 V RDS(on),max 0.25 Qg,typ 45 nC ID,pulse 46 A Eoss 400V 3.7 J Body diode di/dt 500 A/s Type / Ordering Code Package Marking Related Links IPD65R250E6 PG-TO 252 65E6250 see Appendix A Final Data Sheet 2 Rev. 2.2, 2013-07-30