MOSFET Metall Oxide Semiconductor Field Effect Transistor CoolMOS E6 TM 650V CoolMOS E6 Power Transistor IPx65R600E6 Data Sheet Rev. 2.4 Final Power Management & Multimarket TM 650V CoolMOS E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 1 Description TM CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by TM Infineon Technologies. CoolMOS DE series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features Extremely low losses due to very low FoM Rdson*Qg and Eoss Very high commutation ruggedness Easy to use/drive, Pb-free plating, Halogen free mold compound Fully qualified according to JEDEC for Industrial Applications Applications PFC stages, hard switching PWM stages and resonant switching PWM stages e.g. PC Silverbox, Adapter, LCD & PDP TV, Lightning, Server, Telecom and UPS. Please note: For MOSFET paralleling the use o ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V Tj 700 V DS max R 0.6 DS(on), max Q 23 nC G, typ I 18 A D, pulse E 400V 2 J oss Body diode di/dt 500 A/s Type / Ordering Code Package Marking Related links IPD65R600E6 PG-TO252 IFX CoolMOS Webpage IPP65R600E6 PG-TO220 65E6600 IFX Design tools IPA65R600E6 PG-TO220 FullPAK Rev. 2.4 Page 2 2020-05-20