IPD70P04P4-09 OptiMOS -P2 Power-Transistor Product Summary V -40 V DS R 8.9 m DS(on) I -73 A D Features PG-TO252-3-313 P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD70P04P4-09 PG-TO252-3-313 4P0409 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit T =25C, C I Continuous drain current -73 A D V =-10V GS T =100C, C -52 1) V =-10V GS 1) I T =25C -292 Pulsed drain current D,pulse C 1) E I =-36A 24 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - -73 A AS V Gate source voltage - 20 V GS P T =25 C 75 W Power dissipation tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2010-05-26IPD70P04P4-09 Values Parameter Symbol Conditions Unit min. typ. max. 1) Thermal characteristics R Thermal resistance, junction - case - - - 2 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 2 2) 6 cm cooling area -- 40 Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I = -1mA -40 - - V (BR)DSS GS D -V V =V , I =-120A Gate threshold voltage 2.0 3.0 4.0 GS(th) DS GS D V =-32V, V =0V, DS GS Zero gate voltage drain current I - -0.04 -1 A DSS T =25C j V =-32V, V =0V, DS GS - -20 -200 2) T =125C j I V =-20V, V =0V Gate-source leakage current - - -100 nA GSS GS DS R V =-10V, I =-70A Drain-source on-state resistance - 6.4 8.9 m DS(on) GS D Rev. 1.0 page 2 2010-05-26