X-On Electronics has gained recognition as a prominent supplier of IPD80R1K0CEATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPD80R1K0CEATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPD80R1K0CEATMA1 Infineon

IPD80R1K0CEATMA1 electronic component of Infineon
IPD80R1K0CEATMA1 Infineon
IPD80R1K0CEATMA1 MOSFETs
IPD80R1K0CEATMA1  Semiconductors

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See Product Specifications
Part No. IPD80R1K0CEATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N-Ch 800V 5.7A DPAK-2
Datasheet: IPD80R1K0CEATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.3745 ea
Line Total: USD 936.25 
Availability - 16975
Ship by Wed. 18 Jun to Tue. 24 Jun
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
2425
Ship by Wed. 18 Jun to Tue. 24 Jun
MOQ : 2500
Multiples : 2500
2500 : USD 0.6
5000 : USD 0.5938
7500 : USD 0.5812

11
Ship by Wed. 25 Jun to Mon. 30 Jun
MOQ : 1
Multiples : 1
1 : USD 2.8816
10 : USD 1.8535
30 : USD 1.494
100 : USD 1.2612
500 : USD 1.1806
1000 : USD 1.1457

2309
Ship by Mon. 16 Jun to Wed. 18 Jun
MOQ : 1
Multiples : 1
1 : USD 1.7
10 : USD 1.26
25 : USD 1.1109
100 : USD 0.8448
250 : USD 0.8206
500 : USD 0.6732
1000 : USD 0.6336
2500 : USD 0.6072
5000 : USD 0.583

16975
Ship by Wed. 18 Jun to Tue. 24 Jun
MOQ : 2500
Multiples : 2500
2500 : USD 0.3745
5000 : USD 0.3708

19400
Ship by Wed. 18 Jun to Tue. 24 Jun
MOQ : 417
Multiples : 1
417 : USD 1.1256
500 : USD 1.0131
1000 : USD 0.9342
10000 : USD 0.833
100000 : USD 0.6979

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IPD80R1K0CEATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPD80R1K0CEATMA1 and other electronic components in the MOSFETs category and beyond.

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPx80R1K0CE Data Sheet Rev. 2.3 Final Power Management & Multimarket800V CoolMOS CE Power Transistor IPD80R1K0CE, IPU80R1K0CE DPAK IPAK 1 Description tab tab CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performance 2 and ruggedness to allow stable designs at highest efficiency level. 1 1 2 3 3 CoolMOS 800V CE comes with a selected package choice offering the benefit of reduced system costs and higher power density designs. Drain Features Pin 2 High voltage technology Extreme dv/dt rated Gate High peak current capability Pin 1 Low gate charge Low effective capacitances Qualified according to JEDEC Standard Source Pin 3 Pb-free lead plating RoHS comp liant halogen free mold compound Benefits Increased power density solutions due to smaller package System cost / size savings due to reduced cooling requirements Higher system reliability due to low operating temperatures Applications LED Lighting for retrofit applications in QR Flyback topology Table 1 Key Performance Parameters Parameter Value Unit VDS Tj=25C 800 V R 0.95 DS(on),max Q 31 nC g,typ I 18 A D,pulse V 3 V GS(th),typ C 69 pF O(tr),typ Type / Ordering Code Package Marking Related Links IPD80R1K0CE PG-TO 252 8R1K0CE see Appendix A IPU80R1K0CE PG-TO 251 Final Data Sheet 2 Rev. 2.3, 2020-05 -20

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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