IPDQ60R010S7A MOSFET PG-HDSOP-22-1 600V CoolMOS SJ S7A Power Device IPDQ60R010S7A is a high voltage power MOSFET, designed as static switch according to the superjunction (SJ) principle pioneered by Infineon 22 Technologies. 12 TAB IPDQ60R010S7A combines the experience of the leading SJ MOSFET 1 supplier with high class innovation enabling low R in QDPAK package. DS(on) The S7A series is optimised for low frequency switching and high current 11 application like circuit breakers. Features Optimized for low switching frequency in high-end applications (circuit Drain breakers and diode paralleling/replacement in bridge rectifiers). Pin 12-22, Tab S7A technology enables best in class R in smallest footprint. DS(on) Kelvin Source pin improves switching performance at high current. *1 QDPAK (PG-HDSOP-22-1) package is MSL1 compliant, total Pb-free, Gate Pin 1 has easy visual inspection leads. Driver Source Power Pin 2 Source Benefits *1: Internal body diode Pin 3-11 S7A enabling low R for high constant current. DS(on) Increased performance by using MOSFET instead of diode in the application (e.g. synchronous rectification). 2 S7A can reach 10m in QDPAK 315mm footprint. Reduced parasitic source inductance by Kelvin Source improves stability for extreme high current handling and ease of use due to less ringing. Improved thermals enable SMD QDPAK package to be used in high current designs. Potential applications Circuit breakers (HV Battery disconnect switch, DC and AC low frequency switch, HV E-fuse) and diode paralleling/replacement for high power/performance applications. Product validation Qualified according to AEC Q101 Please note: The source and sense source pins are not exchangeable. Their exchange might lead to malfunction. For paralleling 4pin MOSFET devices the placement of the gate resistor is generally recommended to be on the Driver Source instead of the Gate. For production part approval process (PPAP) release we propose to share application related information during an early design phase to avoid delays in PPAP release. Please contact Infineon sales office. Table 1 Key Performance Parameters Parameter Value Unit R 10 m DS(on),max Q 318 nC g,typ V 0.82 V SD Pulsed I , I 801 A SD DS Type / Ordering Code Package Marking Related Links IPDQ60R010S7A PG-HDSOP-22 60A010S7 see Appendix A Final Data Sheet 1 Rev. 2.1, 2021-08-20600V CoolMOS SJ S7A Power Device IPDQ60R010S7A Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.1, 2021-08-20