IPG16N10S4-61 OptiMOS -T2 Power-Transistor Product Summary V 100 V DS 3) 61 mW R DS(on),max I 16 A D Features Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG16N10S4-61 PG-TDSON-8-4 4N1061 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25 C, V =10 V 16 A D C GS one channel active T =100 C, C 11 1) V =10 V GS 1) Pulsed drain current I - 64 D,pulse one channel active 1, 3) E I =8A 33 mJ Avalanche energy, single pulse AS D 3) I - 10 A Avalanche current, single pulse AS V Gate source voltage - 20 V GS Power dissipation P T =25 C 29 W tot C one channel active T , T Operating and storage temperature - -55 ... +175 C j stg Rev. 1.0 page 1 2011-11-29IPG16N10S4-61 Parameter Symbol Conditions Values Unit min. typ. max. 1) Thermal characteristics Thermal resistance, junction - case R - - - 5.2 K/W thJC R SMD version, device on PCB minimal footprint - 100 - thJA 2 2) - 60 - 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =1mA Drain-source breakdown voltage 100 - - V (BR)DSS GS D V V =V , I =9A Gate threshold voltage 2.0 2.8 3.5 GS(th) DS GS D V =100V, V =0V, DS GS 4) I - 0.01 1 A Zero gate voltage drain current DSS T =25C j V =100V, V =0V, DS GS - 1 100 2) T =125C j 3) I V =20V, V =0V - - 100 nA Gate-source leakage current GSS GS DS 3) R V =10V, I =16A - 53 61 mW Drain-source on-state resistance DS(on) GS D Rev. 1.0 page 2 2011-11-29