IPI110N20N3GAKSA1 Infineon

Name: IPI110N20N3GAKSA1
Brand: Infineon
SKU: IPI110N20N3GAKSA1_Infineon
Availability: OutOfStock
Rating: 5 (11 reviews)

IPI110N20N3GAKSA1 electronic component of Infineon

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IPI110N20N3GAKSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPI110N20N3GAKSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	IPI110N20N3GAKSA1
Manufacturer:	Infineon
Category:	MOSFETs
Description:	Transistor: N-MOSFET; unipolar; 200V; 63A; 300W; PG-TO262-3
Datasheet:	IPI110N20N3GAKSA1 Datasheet (PDF)

Price (USD)

1: USD 8.6979 ea
Line Total: USD 8.7

Availability : 0

Qty	Unit Price
1	$ 8.6979
3	$ 7.4767
4	$ 4.9527
9	$ 4.6814

IPI110N20N3GAKSA1 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Thu. 06 Nov to Wed. 12 Nov

MOQ : 500
Multiples : 1

Qty	Unit Price
500	$ 8.1857
1000	$ 7.5042
2000	$ 7.4291
2500	$ 7.3541
3000	$ 7.2814
5000	$ 7.2086
10000	$ 7.1359
25000	$ 7.0645
50000	$ 6.9942

Availability 0

Ship by Tue. 04 Nov to Thu. 06 Nov

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 8.6979
3	$ 7.4767
4	$ 4.9527
9	$ 4.6814

Specifications

Manufacturer Infineon Infineon
Product Category MOSFETs MOSFETs
Technology Optimos 3 Optimos 3
Polarisation Unipolar Unipolar
Case Pg - To262 - 3 Pg - To262 - 3
Mounting Tht Tht
Type Of Transistor N - Mosfet N - Mosfet
Drain-Source Voltage 200 V 200 V
On-State Resistance 10.7 mOhms 10.7 mOhms
Drain Current 63 A 63 A
Gate-Source Voltage 20 V 20 V
Power Dissipation 300 W 300 W

We are delighted to provide the IPI110N20N3GAKSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPI110N20N3GAKSA1 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The IPI110N20N3GAKSA1 is an insulated-gate bipolar transistor (IGBT) made by Infineon Technologies. It has a maximum collector-emitter voltage of 1200 V, a gate threshold voltage of 2.3 V, and a maximum collector current of 110 A. This IGBT is suitable for use in many power conversion applications such as motor drives, solar inverters, and UPS systems. It features standard IGBT technology along with temperature and current sensitive built-in protection for increased safety and reliability.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CYP may also be referenced as

Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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