IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R (SMD version) 14.6 m DS(on),max I 22 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB22N03S4L-15 PG-TO263-3-2 4N03L15 IPI22N03S4L-15 PG-TO262-3-1 4N03L15 IPP22N03S4L-15 PG-TO220-3-1 4N03L15 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I T =25 C, V =10 V 22 A Continuous drain current D C GS T =100 C, C 22 2) V =10 V GS 2) I T =25 C 88 Pulsed drain current D,pulse C E I =22 A Avalanche energy, single pulse 20 mJ AS D I T =25 C Avalanche current, single pulse 22 A AS C Gate source voltage V 16 V GS Power dissipation P T =25 C 31 W tot C T , T Operating and storage temperature -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Rev. 2.0 page 1 2007-03-09IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - 4.9 K/W thJC Thermal resistance, junction - R -- 62 thJA ambient, leaded R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I = 1 mA Drain-source breakdown voltage 30 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =10 A 1.0 1.5 2.2 GS(th) DS GS D V =30 V, V =0 V, DS GS I Zero gate voltage drain current - 0.01 1 A DSS T =25 C j V =30 V, V =0 V, DS GS - 10 1000 2) T =125 C j V =18 V, V =0 V, DS GS -5 60 2) T =85 C j Gate-source leakage current I V =16 V, V =0 V - 1 100 nA GSS GS DS R V =4.5 V, I =11 A Drain-source on-state resistance - 17.5 19.8 m DS(on) GS D V =4.5 V, I =11 A, GS D - 17.2 19.5 SMD version V =10 V, I =22 A - 12.7 14.9 GS D V =10 V, I =22 A, GS D - 12.4 14.6 SMD version Rev. 2.0 page 2 2007-03-09