IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 OptiMOS -T Power-Transistor Product Summary V 100 V DS R (SMD version) 15.4 m DS(on),max I 50 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB50N10S3L-16 PG-TO263-3-2 3N10L16 IPI50N10S3L-16 PG-TO262-3-1 3N10L16 IPP50N10S3L-16 PG-TO220-3-1 3N10L16 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C, V =10 V Continuous drain current 50 A D C GS T =100 C, C 37 1) V =10 V GS 1) I T =25 C 200 Pulsed drain current D,pulse C 1) E I =25A 330 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse 50 A AS 2) V 20 V Gate source voltage GS Power dissipation P T =25 C 100 W tot C T , T Operating and storage temperature -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Rev. 1.1 page 1 2008-04-09IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 Parameter Symbol Conditions Values Unit min. typ. max. 1) Thermal characteristics Thermal resistance, junction - case R - - 1.5 K/W thJC Thermal resistance, junction - R -- 62 thJA ambient, leaded R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I = 1 mA Drain-source breakdown voltage 100 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =60A 1.2 1.7 2.4 GS(th) DS GS D V =80 V, V =0 V, DS GS I Zero gate voltage drain current - 0.01 1 A DSS T =25 C j V =80 V, V =0 V, DS GS - 1 100 2) T =125 C j I V =16V, V =0V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =4.5V, I =50A - 16.1 20.9 m DS(on) GS D V =4.5V, I =50A, GS D - 15.8 20.6 SMD version V =10 V, I =50 A - 13.1 15.7 GS D V =10 V, I =50 A, GS D - 12.8 15.4 SMD version Rev. 1.1 page 2 2008-04-09