IPI60R385CP TM CoolMOS Power Transistor Product Summary Features V T 650 V DS j,max Lowest figure-of-merit R x Q ON g R 0.385 DS(on),max Ultra low gate charge Q 17 nC g,typ Extreme dv/dt rated High peak current capability 1) Qualified according to JEDEC for target applications PG-TO262 Pb-free lead plating RoHS compliant CoolMOS CP is specially designed for: Hard switching SMPS topologies Type Package Ordering Code Marking IPI60R385CP PG-TO262 SP000103250 6R385P Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25 C 9.0 A D C T =100 C 5.7 C 2) I T =25 C 27 Pulsed drain current D,pulse C E I =3.4 A, V =50 V Avalanche energy, single pulse 227 mJ AS D DD 2),3) E I =3.4 A, V =50 V 0.3 Avalanche energy, repetitive t AR D DD AR 2),3) I 3 Avalanche current, repetitive t A AR AR MOSFET dv /dt ruggedness dv /dt V =0...480 V 50 V/ns DS V 20 Gate source voltage static V GS AC (f >1 Hz) 30 P T =25 C Power dissipation 83 W tot C Operating and storage temperature T , T -55 ... 150 C j stg Rev. 2.1 page 1 2007-02-15IPI60R385CP Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I 5.2 Continuous diode forward current A S T =25 C C 2) I 27 Diode pulse current S,pulse 4) dv /dt 15 V/ns Reverse diode dv /dt Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R - - 1.5 K/W Thermal resistance, junction - case thJC Thermal resistance, junction - R leaded - - 62 thJA ambient Soldering temperature, 1.6 mm (0.063 in.) T - - 260 C sold wavesoldering only allowed at leads from case for 10 s Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =250 A 600 - - V (BR)DSS GS D V V =V , I =0.34 mA Gate threshold voltage 2.5 3 3.5 GS(th) DS GS D V =600 V, V =0 V, DS GS Zero gate voltage drain current I -- 1A DSS T =25 C j V =600 V, V =0 V, DS GS -10- T =150 C j I V =20 V, V =0 V Gate-source leakage current - - 100 nA GSS GS DS V =10 V, I =5.2 A, GS D Drain-source on-state resistance R - 0.35 0.385 DS(on) T =25 C j V =10 V, I =5.2 A, GS D - 0.94 - T =150 C j Gate resistance R f =1 MHz, open drain - 1.8 - G Rev. 2.1 page 2 2007-02-15