Product Information

IPL65R130C7

IPL65R130C7 electronic component of Infineon

Datasheet
Trans MOSFET N-CH 650V 15A 4-Pin VSON EP

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

14: USD 6.377 ea
Line Total: USD 89.28

2910 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 14  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 14
Multiples : 1

Stock Image

IPL65R130C7
Infineon

14 : USD 6.6345
25 : USD 6.4333
50 : USD 6.2584
100 : USD 6.1052
250 : USD 5.9706
500 : USD 5.8512

     
Manufacturer
Product Category
Channel Mode
Continuous Drain Current
Operating Temperature Classification
Drain-Source On-Volt
Package Type
Number Of Elements
Gate-Source Voltage Max
Mounting
Power Dissipation
Operating Temp Range
Rad Hardened
Pin Count
Polarity
Type
LoadingGif

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MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOSC7 650VCoolMOSC7PowerTransistor IPL65R130C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket650VCoolMOSC7PowerTransistor IPL65R130C7 ThinPAK8x8 1Description CoolMOSisarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. CoolMOSC7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation.Theproductportfolio providesallbenefitsoffastswitchingsuperjunctionMOSFETsoffering betterefficiency,reducedgatecharge,easyimplementationand outstandingreliability. Features Drain IncreasedMOSFETdv/dtruggedness Pin 5 BetterefficiencyduetobestinclassFOMR *E andR *Q DS(on) oss DS(on) g  ThinPAKSMDPackagewithverylowparasiticinductancetoenablefast andreliableswitchingwithminimumofsizetoincreasepower-density Gate Pin 1 Easytouse/drivedueto driversourcepinforbettercontrolofthegate. Pb-freeplating,halogenfreemoldcompound Driver QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 Power Source Source andJESD22) Pin 2 Pin 3,4 Benefits Enablinghighersystemefficiencybylowerswitchinglosses Enablinghigherfrequency/increasedpowerdensitysolutions Systemcost/sizesavingsduetoreducedcoolingrequirements Highersystemreliabilityduetoloweroperatingtemperatures Applications PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server, Telecom,UPSandSolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit V @ T 700 V DS j,max R 130 m DS(on),max Q 35 nC g.typ ID,pulse 75 A E @400V 4.2 J oss Body diode di/dt 55 A/s Type/OrderingCode Package Marking RelatedLinks IPL65R130C7 PG-VSON-4 65C7130 see Appendix A Final Data Sheet 2 Rev.2.0,2013-04-29

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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