IPL65R160CFD7AUMA1 Infineon

IPL65R160CFD7AUMA1 electronic component of Infineon
IPL65R160CFD7AUMA1 Infineon
IPL65R160CFD7AUMA1 MOSFETs
IPL65R160CFD7AUMA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IPL65R160CFD7AUMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPL65R160CFD7AUMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IPL65R160CFD7AUMA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET
Datasheet: IPL65R160CFD7AUMA1 Datasheet (PDF)
Price (USD)
1: USD 3.8875 ea
Line Total: USD 3.89 
Availability : 2955
  
Ship by Wed. 26 Nov to Fri. 28 Nov
QtyUnit Price
1$ 3.8875
10$ 2.5645
100$ 1.815
500$ 1.661
1000$ 1.518
3000$ 1.507
6000$ 1.474
24000$ 1.463

Availability 2955
Ship by Wed. 26 Nov to Fri. 28 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.8875
10$ 2.5645
100$ 1.815
500$ 1.661
1000$ 1.518
3000$ 1.507
6000$ 1.474
24000$ 1.463

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IPL65R160CFD7AUMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPL65R160CFD7AUMA1 and other electronic components in the MOSFETs category and beyond.

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IPL65R160CFD7 MOSFET ThinPAK 8x8 650V CoolMOS CFD7 SJ Power Device The latest 650 V CoolMOS CFD7 extends the voltage class offering of the CFD7 family and is a successor to the 650 V CoolMOS CFD2. Resulting from improved switching performance and excellent thermal behavior, 650 V CooMOS CFD7 offers highest efficiency in resonant switching topologies, such as LLC and phase-shift-full-bridge (ZVS). As part of Infineons fast body diode portfolio, this new product series blends all advantages of a fast switching technology together with superior hard commutation robustness. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions. Features Drain Pin 5 Ultra-fast body diode 650V break down voltage *1 Gate Best-in-class R DS(on) Pin 1 Reduced switching losses *2 Driver Low RDS(on) dependency over temperature Source Source *1: Internal body diode Pin 2 Pin 3,4 *2: Integrated ESD diode Benefits Excellent hard commutation ruggedness Extra safety margin for designs with increased bus voltage Enabling increased power density solutions Outstanding light load efficiency in industrial SMPS applications Improved full load efficiency in industrial SMPS applications Price competitiveness over previous CoolMOS families Potential applications Suitable for Soft Switching topologies Optimized for phase-shift full-bridge (ZVS), LLC Applications Server, Telecom, EV Charging, Solar Product validation Fully qualified according to JEDEC for Industrial Applications Please note: The source and sense source pins are not exchangeable. Their exchange might lead to malfunction. For paralleling 4pin MOSFET devices the placement of the gate resistor is generally recommended to be on the Driver Source instead of the Gate. Table 1 Key Performance Parameters Parameter Value Unit VDS Tj,max 700 V RDS(on),max 160 m Q 28 nC g,typ I 55 A D,pulse E 400V 4.0 J oss Body diode di /dt 1300 A/s F Type / Ordering Code Package Marking Related Links IPL65R160CFD7 PG-VSON-4 65R160F7 see Appendix A Final Data Sheet 1 Rev. 2.0, 2021-07-28650V CoolMOS CFD7 SJ Power Device IPL65R160CFD7 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.0, 2021-07-28

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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