Product Information

IPL65R165CFDAUMA2

IPL65R165CFDAUMA2 electronic component of Infineon

Datasheet
MOSFET HIGH POWER_LEGACY

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.8582 ea
Line Total: USD 7.86

0 - Global Stock
MOQ: 1  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 2.4798

     
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IPL65R165CFD MOSFET ThinPAK 8x8 650V CoolMOS CFD2 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation and conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler. ThinPAK ThinPAK is a a new leadless SMD package for HV MOSFETs. The new Drain Pin 5 package has a very small footprint of only 64mm (vs. 150mm for the DPAK) and a very low profile with only 1mm height (vs. 4.4mm for the DPAK). The significantly smaller package size, combined with benchmark Gate Pin 1 low parasitic inductances, provides designers with a new and effective way Driver to decrease system solution size in power-density driven designs. Source Power Pin 2 Source Pin 3,4 Features Reduced board space consumption Increased power density Short commutation loop Smooth switching waveform Ultra-fast body diode Very high commutation ruggedness Extremely low losses due to very low FOM Rdson*Qg and Eoss Easy to use/drive Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22) Pb-free plating, Halogen free mold compound Potential applications 650V CoolMOS CFD2 is especially suitable for resonant switching stages for e.g. PC Silverbox, LCD TV, Lighting, Server and Telecom. Table 1 Key Performance Parameters Parameter Value Unit V T 700 V ds jmax RDS(on),max 0.165 Q 86 nC g,typ I 67 A D,pulse E 400V 6.8 J oss Body diode di /dt 900 A/s F Q 0.7 C rr tr 140 ns I 8.8 A rrm Type / Ordering Code Package Marking Related Links IPL65R165CFD PG-VSON-4 65F6165 see Appendix A Final Data Sheet 1 Rev. 2.1, 2017-09-07650V CoolMOS CFD2 Power Transistor IPL65R165CFD Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Test Circuits . 10 Package Outlines . 11 Appendix A 12 Revision History 13 Trademarks . 13 Disclaimer 13 Final Data Sheet 2 Rev. 2.1, 2017-09-07

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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