MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPL65R230C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket650V CoolMOS C7 Power Transistor IPL65R230C7 ThinPAK 8x8 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching superjunction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability. Features Drain Increased MOSFET dv/dt ruggedness Pin 5 Better efficiency due to best in class FOM R *E and R *Q DS(on) oss DS(on) g ThinPAK SMD Package with very low parasitic inductance to enable fast and reliable switching with minimum of size to increase power-density Gate Pin 1 Easy to use/drive due to driver source pin for better control of the gate. Pb-free plating, halogen free mold compound Driver Qualified for industrial grade applications according to JEDEC (J-STD20 Power Source Source and JESD22) Pin 2 Pin 3,4 Benefits Enabling higher system efficiency by lower switching losses Enabling higher frequency / increased power density solutions System cost / size savings due to reduced cooling requirements Higher system reliability due to lower operating temperatures Applications PFC stages and hard switching PWM stages for e.g. Computing, Server, Telecom, UPS and Solar. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 700 V DS j,max R 230 m DS(on),max Q 20 nC g.typ ID,pulse 41 A E 400V 2.3 J oss Body diode di/dt 55 A/s Type / Ordering Code Package Marking Related Links IPL65R230C7 PG-VSON-4 65C7230 see Appendix A Final Data Sheet 2 Rev. 2.0, 2013-04-29